Ming-Cheng Cheng

Associate Professor
138 CAMP
Clarkson University
PO Box 5720
Potsdam, NY 13699-5720

Phone: 315-268-7735
FAX: 315-268-7600
E-mail: mcheng@clarkson.edu
Web page

Educational Background
B.S., Electrophysics National Chiao Tung University (1980)
M.S. Systems Engineering Polytechnic University (Brooklyn) (1986)
Ph.D. Electrical Engineering Polytechnic University (Brooklyn) (1990)

Teaching Interests
Microelectronic circuits, solid-state devices, compound semiconductor devices, transport modeling for solid state devices. Courses taught include:

ES250 – Electrical Science
EE341 – Microelectronics
EE441/541 – Electronic Devices for IC Simulation
EE610 – ECE Seminar
EE641/PH641 – Charge Carrier Transport in Semiconductors

Research Interests
Dr. Cheng’s research interests are in general concerned with modeling and simulation of microelectronics and solid-state devices. These include heat flow modeling of interconnects and solid-state devices, thermal effects on solid-state device and IC performance/reliability, and simulation of advanced solid-state devices, including SOIs, MOSFETs, HEMTs, HBTs, quantum devices and spin transistors.

Selected Publications
Feixia Yu, Ming-C. Cheng, "Application of heat flow models to SOI current mirrors," Solid-State Electronics Vol. 48, pp. 1733-1739, Oct 2004.

Jun Lin, Min Shen, Ming-C. Cheng, M.L. Glasser, "Efficient thermal modeling of SOI MOSFETs for fast dynamic operation," IEEE Trans. Electron Devices, Vol. 51, pp. 1659-1666, Oct. 2004.

Ming Shen, Semion Saikin, Ming-C. Cheng, "Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well," J. Appl. Phys., Vol. 96, pp. 4319-4325, Oct 2004.

Semion Saikin, Min Shen and Ming-C. Cheng, "Study of Spin-Polarized Transport Properties for Spin-FET Design Optimization," IEEE Trans. Nanotechnology, Vol. 3, pp. 173-179, March 2004.

Ming-C. Cheng, Feixia Yu, Peter Habitz, Goodarz Ahmadi, "Analytical heat flow modeling of silicon-on-insulator devices," Solid-State Electronics, Vol. 48, pp. 415-426, March 2004.

Min Shen, Semion Saikin, Ming-C. Cheng, Vladimir Privman, "Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction," Mathematics and Computers in Simulation, 65, pp. 351-363, March 2004.

Ming-C. Cheng, Feixia Yu, Jun Lin, Min Shen, Goodarz Ahmadi, "Steady-State and Dynamic Heat Flow Modeling of SOI MOSFET’s," Microelectronics Reliability, vol. 44, pp. 381-396, March 2004. (Invited paper)

Feixia Yu, Ming-C. Cheng, Peter Habitz and Goodarz Ahmadi, "Modeling of Thermal Behavior in SOI Structures," IEEE Trans. Electron Devices, Vol. 51, pp. 83-91, January 2004.

Ming-C. Cheng, R. Wettimuny, P. Habitz and G. Ahmadi, "Thermal simulation for SOI devices using thermal circuit models and device simulation," Solid St. Electronics, Vol. 47, pp. 345-351, Feb 2003.

Semion Saikin, Min Shen, Ming-C. Cheng, Vladimir Privman, "Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures," J. Appl. Phys., pp. 1769-1775, August 2003.