Students taking classes outside on the Clarkson campus

Micro and Nanoelectronics Laboratory

Research in electronics in the ECE Department at Clarkson University focusses on the simulation and modeling of microelectronic devices. Recently, we have been engaged in modeling of quantum spintronic devices. It has been recognized that quantum phenomena in nanoelectronic structures could fundamentally change electronics and computing. Today, nanotechnology has become a very active discipline in science and technology. Much of the interest in nanotechnology is driven by many potential commercial applications that are predicted to launch a new industrial revolution. Almost every industry is likely to be affected. Development of nanotechnology will have a significant impact on the advancement of biomedical, civilian and military applications.

The Center for Quantum Device Techonology and the International Center for Gravity Materials Science and Application, described in Section V.D are an integral part of our micro/nano electronics efforts. Deep sub-micron scale device theory and modeling is an active area of investigation. We have particular interests in MOS/SOI devices, thermal effects on solid-state devices and interconnects, the characterization of III-V compound semiconductor devices, and MODFETs, HEMTs, and HBTs. Additionally, we have an active interest in advanced validated models of these devices for VLSI design applications.