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Ming-Cheng Cheng

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Ming-Cheng ChengAssociate Professor
138 CAMP
Clarkson University
PO Box 5720
Potsdam, NY 13699-5720

Phone: 315-268-7735
Fax: 315-268-7600
E-mail: mcheng@clarkson.edu
Website

Educational Background
B.S., Electrophysics National Chiao Tung University (1980)
M.S. Systems Engineering Polytechnic University (Brooklyn) (1986)
Ph.D. Electrical Engineering Polytechnic University (Brooklyn) (1990)

Teaching Interests
Microelectronic circuits, solid-state devices, compound semiconductor devices, transport modeling for solid state devices. Courses taught include:

ES250 – Electrical Science
EE341 – Microelectronics
EE441/541 – Electronic Devices for IC Simulation
EE610 – ECE Seminar
EE641/PH641 – Charge Carrier Transport in Semiconductors

Research Interests
Dr. Cheng’s research interests are in general concerned with modeling and simulation of microelectronics and solid-state devices. These include heat flow modeling of interconnects and solid-state devices, thermal effects on solid-state device and IC performance/reliability, and simulation of advanced solid-state devices, including SOIs, MOSFETs, HEMTs, HBTs, quantum devices and spin transistors.

Recent PublicationsYu Zhang, Ming-C. Cheng, Pragasen Pillay and Brain Helenbrook, “High Order Finite Element Model for Core Loss Assessment in a Hysteresis Magnetic Lamination,” J. Appl. Physics, Vol. 106, 043911 (2009). 

E. Gremion, A. Cavanna, Y-X. Liang, U. Gennser, M.-C. Cheng, etc., “Development of Ultra-Low Noise HEMTs for Cryoelectronics at ≤4.2 K,”  J. Low Temperature Physics, V.151, Numbers 3-4, pp. 971-978, May, 2008

E. Gremion, A. Cavanna, Y-X. Liang, U. Gennser, M.-C. Cheng, etc., “Development of Ultra-Low Noise HEMTs for Cryoelectronics at ≤4.2 K,”  J. Low Temperature Physics, V.151, Numbers 3-4, pp. 971-978, May, 2008

Eric A. Foreman, Peter A. Habitz and Ming-Cheng Cheng, ‘Optimizing Global Interconnect Process Variations in Statistical Static Timing Analysis,” VLSO/ULSI Multilevel Interconnection Conference (VIMC 2008), Fremont, California, Oct., 27-30, 2008.

E. Gremion, A. Cavanna, Y-X. Liang, U. Gennser, M.C. Cheng, M. Fesquet, G. Chardin, A. Benoıt, Y. Jin , “Development of Ultra-Low Noise HEMTs for Cryoelectronics at 4.2 K,” Int. Workshop on Low Temperature Detector (LTD-12), U01, Paris, France, July 2007.

M.C. Cheng, K. Zhang, “Non-Isothermal Circuit for SOI MOSFETs for Electrothermal Simulation of SOI Integrated Circuits,” Int. Semicond. Dev. Res. Symp. Wp9-06-05, College Park, MD, December 2007.