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Professor Philip K. Hopke

CAMP Professor Philip Hopke is One of only 40 Scientists Worldwide to Participate in a Special International Symposium

Professor Philip K. Hopke, the Bayard D. Clarkson Distinguished Professor of Chemical Engineering and Chemistry at Clarkson University, participated in a three-day international scientific symposium held May 14-16, 2003 in the Netherlands. He is one of only 40 distinguished scientists from around the world who took part in the research sessions and submitted a paper at the conference, which was held in honor of the forthcoming publication of the 500th volume of Analytica Chemica Acta. (Analytica Chemica Acta is an influential peer-reviewed journal that covers all aspects of analytical chemistry.) His paper focused on chemometrics, a subdiscipline of chemistry that uses the application of mathematical and statistical methods to extract the most complete and accurate information possible from chemical data. Professor Hopke, one of the pioneers in this developing discipline, is a Founding Editor of the journals Chemometrics and Intelligent Laboratory Systems.

In addition, Professor Hopke is an internationally renowned air quality researcher and the current Chair of the EPA Clean Air Scientific Advisory Committee. He is also the Director of Clarkson University's recently established Center for Air Resources Engineering and Science (CARES). CARES is a founding member of the New York Environmental Quality Systems Center, a network of 12 research institutions, which recently received a $15 million grant from the New York State Office of Science, Technology and Academic Research (NYSTAR) to study air quality.

CALENDAR OF EVENTS

Short Course on Nuclear Magnetic Resonance (NMR)

Clarkson University Potsdam, New York, July 7-11, 2003

 

CAMP's Eighth International Symposium on Chemical-Mechanical Polishing (CMP)

Hilton Resort Lake Placid, New York
August 10 - 13, 2003

 

Lecture - based Short Course
"Use of Surfactants in Microelectronic Applications"


Hilton Resort Lake Placid, New York
August 13 - 15, 2003

 

CAMP's Board of Directors and Fall Meeting

Clarkson University Potsdam, New York October 15-17, 2003

(For information about CAMP industrial short courses, please call Professor Richard Partch at 315-268-2351 or send email to him at partch@clarkson.edu).

** Information, on these and other CAMP events, is available at the CAMP website at http://www.clarkson.edu/camp.

 

Clarkson's CAMP Professors Babu and Ahmadi Receive IBM SUR Computer Award

Vice Provost S.V. Babu and Clarkson Distinguished Professor Goodarz Ahmadi ( the Robert R. Hill '48 Professor in Mechanical Engineering) received an IBM SUR award for their project titled "Computational Modeling of the Chemical - Mechanical Planarization Process (CMP)." The general objective of this research is to provide a fundamental understanding of the parameters that control the effectiveness of chemical-mechanical planarization (CMP) processes for blanket and patterned wafers. Particular attention will be given to CMP of metal and low-k materials at low down force and the effect of chemical agents in the slurry as well as shallow trench isolation (STI) processing. The emerging areas of mixed abrasive and abrasive free CMP will also be analyzed. Based on this understanding and the existing knowledge base, a computational model for analyzing the details of the CMP process for removal of mixed materials including copper, barrier layer, and low-k substrates will be developed that will be useful at 100 nm and subsequent nodes. The professors will work closely with appropriate IBM researchers to ensure that the model assumptions and predictions confirm with practice and incorporate any additional emerging challenges.

A major goal of the project is to provide the needed fundamental understanding of the microscopic processes that lead to the surface planarization during CMP. Professors Babu and Ahmadi will develop a reliable computational model for the surface removal rate during the planarization process as a function of slurry abrasive physical and chemical characteristics, as well as pad parameters. Particular attention will be given to understanding the effects of the abrasive particle surface morphology, slurry pH (electrical double layer forces), mixed abrasive slurry and chemical agents on the removal rates, dishing, and erosion of patterned wafers. Their recently developed particle-scale models for interaction of slurry abrasives with the blanket wafer surface [1,2] provide the basis for the proposed computational modeling study. In earlier work, the importance of the van der Waals adhesion force between the abrasive and the wafer and abrasive surface roughness was identified. This new effort will extend the model to include the effects of abrasive particle size distribution, slurry pH (colloidal forces), and binary [3,4,5,6] / ternary abrasive systems during the CMP of patterned wafers.

References 1. Ahmadi, G. and Xia, X., "A Model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical-Mechanical Polishing Process," Journal of the Electrochemical Society, 148, G99 (2001).

2. Mazaheri , A.R. and Ahmadi, G., "Modeling the Effect of Bumpy Abrasive Particles on Chemical-Mechanical Polishing," Journal of the Electrochemical Society, 149, G370 (2002).

3. Jindal, A., Hegde, S., and Babu, S.V., "Chemical-Mechanical Polishing Using Mixed Abrasive Slurries," Electrochem. and Solid State Letters, 5, G48 (2002).

4. Jindal, A., Hegde, S., and Babu, S.V. " Mixed Abrasive Slurry: A Study on Metal CMP," Semiconductor FabTech, 16, 239 ( 2002).

5. Jindal, A., Hegde, S., and Babu, S.V., " Mixed Abrasive Slurries for Dielectric Film Polishing," Journal of the Electrochemical Society, 150, G314 (2003).

6. Lee, S-H., Lu, Z., Babu, S.V., and Matijevic', E. "Chemical- Mechanical Polishing of Thermal Oxide Films Using Silica Particles Coated with Ceria," J. Materials Res., 17, 2744 (2002).

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