Philip K. Hopke
Professor Philip Hopke is One of only 40 Scientists Worldwide
to Participate in a Special International Symposium
Philip K. Hopke, the Bayard D. Clarkson Distinguished Professor
of Chemical Engineering and Chemistry at Clarkson University,
participated in a three-day international scientific symposium
held May 14-16, 2003 in the Netherlands. He is one of only
40 distinguished scientists from around the world who took
part in the research sessions and submitted a paper at the
conference, which was held in honor of the forthcoming publication
of the 500th volume of Analytica Chemica Acta. (Analytica
Chemica Acta is an influential peer-reviewed journal
that covers all aspects of analytical chemistry.) His paper
focused on chemometrics, a subdiscipline of chemistry that
uses the application of mathematical and statistical methods
to extract the most complete and accurate information possible
from chemical data. Professor Hopke, one of the pioneers
in this developing discipline, is a Founding Editor of the
journals Chemometrics and Intelligent Laboratory Systems.
Professor Hopke is an internationally renowned air quality
researcher and the current Chair of the EPA Clean Air Scientific
Advisory Committee. He is also the Director of Clarkson
University's recently established Center for Air Resources
Engineering and Science (CARES). CARES is a founding member
of the New York Environmental Quality Systems Center, a
network of 12 research institutions, which recently received
a $15 million grant from the New York State Office of Science,
Technology and Academic Research (NYSTAR) to study air quality.
Course on Nuclear Magnetic Resonance (NMR)
Clarkson University Potsdam, New York,
July 7-11, 2003
Eighth International Symposium on Chemical-Mechanical
Hilton Resort Lake Placid, New York
August 10 - 13, 2003
- based Short Course
"Use of Surfactants in Microelectronic Applications"
Hilton Resort Lake Placid, New York
August 13 - 15, 2003
Board of Directors and Fall Meeting
Clarkson University Potsdam, New York October 15-17,
information about CAMP industrial short courses,
please call Professor Richard Partch at 315-268-2351
or send email to him at email@example.com).
Information, on these and other CAMP events, is
available at the CAMP website at http://www.clarkson.edu/camp.
CAMP Professors Babu and Ahmadi Receive IBM SUR Computer Award
Provost S.V. Babu and Clarkson Distinguished Professor Goodarz
Ahmadi ( the Robert R. Hill '48 Professor in Mechanical Engineering)
received an IBM SUR award for their project titled "Computational
Modeling of the Chemical - Mechanical Planarization Process
(CMP)." The general objective of this research is to provide
a fundamental understanding of the parameters that control
the effectiveness of chemical-mechanical planarization (CMP)
processes for blanket and patterned wafers. Particular attention
will be given to CMP of metal and low-k materials at low down
force and the effect of chemical agents in the slurry as well
as shallow trench isolation (STI) processing. The emerging
areas of mixed abrasive and abrasive free CMP will also be
analyzed. Based on this understanding and the existing knowledge
base, a computational model for analyzing the details of the
CMP process for removal of mixed materials including copper,
barrier layer, and low-k substrates will be developed that
will be useful at 100 nm and subsequent nodes. The professors
will work closely with appropriate IBM researchers to ensure
that the model assumptions and predictions confirm with practice
and incorporate any additional emerging challenges.
major goal of the project is to provide the needed fundamental
understanding of the microscopic processes that lead to the
surface planarization during CMP. Professors Babu and Ahmadi
will develop a reliable computational model for the surface
removal rate during the planarization process as a function
of slurry abrasive physical and chemical characteristics,
as well as pad parameters. Particular attention will be given
to understanding the effects of the abrasive particle surface
morphology, slurry pH (electrical double layer forces), mixed
abrasive slurry and chemical agents on the removal rates,
dishing, and erosion of patterned wafers. Their recently developed
particle-scale models for interaction of slurry abrasives
with the blanket wafer surface [1,2] provide the basis for
the proposed computational modeling study. In earlier work,
the importance of the van der Waals adhesion force between
the abrasive and the wafer and abrasive surface roughness
was identified. This new effort will extend the model to include
the effects of abrasive particle size distribution, slurry
pH (colloidal forces), and binary [3,4,5,6] / ternary abrasive
systems during the CMP of patterned wafers.
References 1. Ahmadi,
G. and Xia, X., "A Model for Mechanical Wear and Abrasive
Particle Adhesion during the Chemical-Mechanical Polishing
Process," Journal of the Electrochemical Society, 148,
Mazaheri , A.R. and Ahmadi, G., "Modeling the Effect of Bumpy
Abrasive Particles on Chemical-Mechanical Polishing," Journal
of the Electrochemical Society, 149, G370 (2002).
Jindal, A., Hegde, S., and Babu, S.V., "Chemical-Mechanical
Polishing Using Mixed Abrasive Slurries," Electrochem.
and Solid State Letters, 5, G48 (2002).
4. Jindal, A., Hegde, S., and Babu, S.V. "
Mixed Abrasive Slurry: A Study on Metal CMP," Semiconductor
FabTech, 16, 239 ( 2002).
Jindal, A., Hegde, S., and Babu, S.V., " Mixed Abrasive Slurries
for Dielectric Film Polishing," Journal of the Electrochemical
Society, 150, G314 (2003).
Lee, S-H., Lu, Z., Babu, S.V., and Matijevic', E. "Chemical-
Mechanical Polishing of Thermal Oxide Films Using Silica Particles
Coated with Ceria," J. Materials Res., 17, 2744