CAMP Annual Technical Meeting
From left: CAMP Deputy Director Jack Prendergast, Clarkson University President Anthony Collins, Keynote Speaker Doug Neugold (President & CEO, ATMI), Executive Deputy Director of NYSTAR Ed J. Hamilton, and Distinguished University Professor /CAMP Director S.V. Babu.
Clarkson University Provost Thomas Young, William Ayres (President, Ag Bio Energy LLC), Keynote Speaker Rick Schmachtenberg (Senior VP, Xerox), Distinguished University Professor /CAMP Director S.V. Babu, Dr. Santokh Badesha (a Xerox Fellow at the Xerox Corporation), and CAMP Deputy Director Jack Prendergast.
CAMP’s Annual Technical Meeting was held May 14 - 16, 2008 at the Canandaigua Inn on the Lake in Canandaigua, New York. The very successful meeting had over 100 attendees including representatives of Industry, University, and New York State Economic Development Organizations. Participating companies include Xerox, Precept Energy Group, Free Form Fibers, ATMI, QED, Umicore in Germany, Conpart of Norway, DuPont, Kodak, GE Global Research, Corning, United Materials, Ag Bio Energy LLC, ROCCERA LLC, General Motors, Spinnaker Cross, Inc., Ferro Corporation, the Procter & Gamble Company, and METSS Corporation.
The keynote speakers were Doug Neugold (President & CEO, ATMI) and Rick Schmachtenberg (Senior VP, Xerox). Mr. Neugold’s keynote address was called “Trends and Challenges, The Transition to 32 nm and Beyond.” The title of the keynote address presented by Mr. Schmachtenberg was “Green Challenges for Digital Printing.” In addition, Ed Hamilton, Executive Deputy Director of NYSTAR, gave a short talk.
This year's meeting had a record number of poster presentations on CAMP research. They were judged in three categories: most attractive, most creative, and best overall. Certificates and ribbons were presented by Clarkson University Provost Thomas Young to the first, second, and third place winners of each category. The judges were Mark Mayton (Spinnaker Cross, Inc.), Dr. Keith Redford (Conpart), Dr. David Merricks (Ferro), and Dr. Helge Kristiansen (Conpart). The winners are listed below.
Best Overall Poster
First Place: Synthesis and Biosensing Applications of Titania for Biological Sensors” Authors are Professors Shipp and Andreescu, John Njagi, Vidyasagar Malepu, and Cristina Ispas
Second Place: “Acoustic Techniques for Drug Tablet Monitoring and Evaluation” Authors are Professor Cetinkaya and Ilgaz Akseli
Third Place: “Synthetic Approaches to Organic Core-Metal Oxide Shell Nanoparticles” Authors are Professor Partch, Deborah Shipp, Lauren Gaskell, Lifeng Chen, and Sudha Rani
Most Attractive Poster First Place: “Electrochemical Characteristics of Hmim-Tf2N Ionic Liquid at the Porous Surface of a Paper Electrode of Multiwall Carbon Nanotubes”Authors are Professors Roy and Baltus, S.S. Moganty, and P.C. Goonetilleke
Second Place: “Monitoring and Investigation of Fouling Phenomenon in Tubular Heat Exchangers by Heat Transfer Resistance (HTR) Technique” Authors are Professors Aidun and Marzocca, and Mahmood Izadi
Third Place: “Acoustic Techniques for Drug Tablet Monitoring and Evaluation” Authors are Professor Cetinkaya and Ilgaz Akseli
Most Creative Poster First Place: “Intensified Biodiesel Reaction Using Rotating Tube Reactor Technology”Authors are Professor Jachuck and Himanshu Lodha
Second Place: “Electrochemical Studies of Nanomaterials for Advanced Lithium-Ion Batteries” Authors are Professor Roy, P.C. Goonetilleke, S. Sengupta, T. Pyles, R.R. Revur,and A. Tiruvannamalai
Third Place: “Can Cytotoxicity of Nanoparticles be Seen in AFM Images of Cytoskeleton?” Authors are Professors Sokolov and Woodworth, Ravi Gaikwad, and Natalia Guz
Cu/Barrier and Dielectric Film Polishing and Planarization
Professor S.V. Babu’s research group is continuing its fundamental investigations of various aspects of chemical-mechanical planarization (CMP) of metal and dielectric films focused on developing slurry formulations that are more active chemically for low pressure planarization of Cu, while ensuring appropriate selectivity with respect to the underlying barrier and low-k dielectric films. While hydrogen peroxide is likely to remain the primary oxidizer in such slurries due to its multiple advantages, several compositions involving glycine or carboxylic acids (oxalic, acetic, citric, malonic, succinic, glutaric, etc.) and, in some cases, their mixtures as complexing/chelating agents appear to be very interesting. For example, single dispersion candidate slurries for polishing both Cu and the barrier layer using oxalic and tartaric acid as complexing agents have been proposed and the results have been already published. The necessary selectivity between Cu and the Ta barrier layer can be achieved by just modifying the pH. Evaluation of these dispersions using 300 mm pattern wafers is underway. Also, two surfactants - ammonium dodecyl sulfate and dodecyl benzene sulfate - that can suppress the Cu dissolution rate and help to achieve high planarization efficiencies for Cu CMP have been identified. In some cases, a small amount of BTA significantly enhanced this protective ability by forming a very compact passive film on the Cu surface, while in others, there is no need for BTA. In the absence of BTA, these reagents also help to minimize defects and facilitate post-CMP cleaning.
Also, investigation of controlled selectivity in material removal when oxide, nitride and/or poly-Si films are being polished has led to several attractive candidate slurries. Several ceria and silica based compositions that yield a high nitride and low oxide polish rate and simultaneously a controllable poly-Si removal rate have been identified. Defect characterization and mitigation studies using a variety of hard core/soft shell type composite abrasives also remain of great interest
Screening Chemical Additives for Ta CMP Slurries
BASF is supporting a project, entitled “Process for Screening Chemical Additives for Ta CMP Slurries,” that is being carried out in the laboratory of Professor Ian Suni from Clarkson’s Department of Chemical and Biomolecular Engineering. Ta is now widely used as the liner (barrier) material in Si-based semiconductor devices. During dual damascene processing of Cu interconnect wires, excess Ta is typically removed by chemical mechanical planarization (CMP). Professor Suni will develop electrochemical methods for screening chemical additives to improve Ta CMP slurries. Professor Suni is one of the world’s leading experts on Ta electrochemistry. This project is being managed by Dr. Yuzhuo Li, who is a leading expert on CMP.