Benjamin Dorfman Publications

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Earlier Publications (pre-1995)

Selected Publications in the field of stabilized diamond-like carbon and composites of atomic scale
V.F. Dorfman, Diamond-Like Nanocomposites (DLN) Thin Sol.Films, 212, (1992) 267.

B.F. Dorfman, A. Bozhko, B. N. Pypkin, R.T. Borra, A.R. Srivatsa, H. Zhang, T.A. Skotheim I.D.Khan, D.Rodichev, G.G.Kirpilenko, Diamond-Like Nanocomposites: Electronic transport mechanisms and some applications. Thin Solid Films, 212, 274 (1992).

V.F. Dorfman, S.A. Petrushinina, B.N. Pypkin, Y. Smirnov, Impact Activation of Chemical Reactions, Sov. Phys. Dokl. 28, 743 (1983).

V.F. Dorfman, V.V. Sevastianov, B.V. Kozeikin, I.A. Frolov, Influence of Ion Bombardment on Chemical Activity of Metallic Films, Sov. Microelec., 11, 349 (1982).

V.F. Dorfman, Amorphous solid systems diamond-like carbon - carbides: films and multiplayer structures. The first European Conference on Diamond and Diamondlike Carbon Coatings, Sept. 1990, Crans Montana, Switzerland. Abstract 7.9, Switzerland, Crans-Montana, 1990. Report on the Plenary session.

V.F. Dorfman, B.N. Pypkin, G.G. Kirpilenko, A. Emelyanov, N. Samsonov, "The Schottky Barriers "Diamond-like Films (DLF)-GaAs" and Integrated Structure on their base" The first European Conference on Diamond and Diamondlike Carbon Coatings, Sept. 1990, Crans Montana, Switzerland. Abstract 7.9, Switzerland, Crans-Montana, 1990.

V.P. Ageev, N.I. Chapliev, T.N. Glushko, T.V. Konoernko, A.A. Smolin, V.E. Strelnitsky, A.V. Kuzmichev, V.F. Dorfman, B.N. Pypkin, Light induced variation of optical properties of diamond-like films, ibid., 7-17.

V.F. Dorfman, B.N. Pypkin, B.V. Dunaev, V.P. Ageev, T.N. Glushko, A.V. Kuzmichev, Investigation of "diamond-polymer" composite multi-layer structures and their applications in jet printing heads, ibid, Abstract 16.8.

V.F. Dorfman, I. Doronin, A. Bozhko, Electron transport phenomena in the high resistant "diamond -polymer" films, IBID, addition. Report.

V.F. Dorfman and B.N. Pypkin, Amorphous Solid Systems: Diamond-like carbon, carbides, films and multi-layer structures, Surface and Coatings Technology, 48, 193 (1991).

V.F. Dorfman, B.N. Pypkin, A.B. Gofman, I.O.Doronin, and R.A. Krivas, Quasi-phase states in the thin stabilized amorphous carbon films polymerized in plasma. Sov. Tech. Phys. Lett. 14, N5 (1988). Transl. by American Institute of Physics, p. 455-457 (1989).

D. Latev, V.F. Dorfman, B.N. Pypkin, "Synthesis and application of Diamond-Polymer Films (DPF) to Hard-Disk Technology", Surface and Coatings Technologies, 47, 308(1991).

B. Dorfman, B. Pypkin, I.D. Khan, V.P. Ageev, T.N. Glushko, A.V. Kuzmichev, B.N. Dunaev, G.G. Kirpilenko, On some properties and applications of tungsten alloyed amorphous carbon films. Surface and Coatings Technologies, 48, 199 (1991).

V.P. Ageev, N.I. Chapliev, T.N. Glushko, T.V. Kononenko, A.V. Kuzmichev, V.F. Dorfman, B.N. Pypkin, Light-induced variations of optical properties of diamond-like films, Surface and Coating Technology, 47 (1991) 269

B.F. Dorfman, A. Bozhko, B.N. Pypkin, R.T. Borra, A.R. Srivatsa, H. Zhang, T.A. Skotheim I.D. Khan, V.P. Ageev, D. Rodichev, G.G. Kirpilenko, Insulating and Electroconducting Diamondlike nanocomposites, Interconnection and contact metallization for ULSI,. Proceedings of the Symposia on Patterning Science and Technology II, Edited by Terry O. Herndon and Andrew L. Wu. Electrochemical society, Proceedings 92-6, 343-352 (1991).

V.P. Ageev, T.N. Glushko, V.F. Dorfman, A.V. Kuzmichev, B.N. Pypkin, Modification of Iinsulating Diamond-Like Films by UV Laser Irradiation. News of Academy of Sciences of the USSR, Physics, 96, 7 (1991) 1375.

B. Dorfman, M. Abraizov, Fred H. Pollak, D. Yan, M. Strongin, J.Z.Wan, X.-Q. Yang, Z.-Y. Rong., Atomic-Structure Modification of Diamond-like Nanocomposite Films, Observation by Raman Spectroscopy, FTIR and STM, Mat. Res. Soc. Symp. Proc. 349, 547 (1994).

B.F. Dorfman, Atomic-Scale Composite Diamond-Like Coatings. Coatings for Aerospace Industry, CAI-4, 4-th International Seminar, Toronto, Canada. October 1995. 47-51

O.A. Volokhovskaya, V.F. Dorfman, Yu.G. Martynenko, V.V. Podalkov, The Determination of Effective Elastic Constants of Diamond-Like Films With Dispersed Metal, Applied Physics, in Russian, 1995, v.4, 51

Theory of thin films and crystals growth
V.F. Dorfman, M.B.Galina, To the Theory of Nucleus Formation and Growth from Molecular Beams and Gas Phase, Sov. Acad.Science Reports,182(1968),n.2, p.372-375.

V.F. Dorfman, M.B.Galina, L.I.Trusov, To Nucleousformation Theory During Crystal Growth, Sov.Crystallography, 14 (1969)1, 71-78.

V.F. Dorfman, L.I.Trusov, Local Supersaturations During Crystallization of Multicomponents Substances on Microununiform Surface, "Arsenide of Gallium", Tomsk, 1969, v.2, pp.37-39 (in Rus.).

V.F. Dorfman, Contour Representation of The Crystal Growing Surface, Sov.Crystallography, 15 (1970) 3, 435-442.

V.F. Dorfman, L.I.Trusov, Microsupersaturations and Segragation Induced by Local Fields of The Substrate, Sov.Crystallography, 15 (1970) 4, 788-791.

V.F. Dorfman, Statistical Theory of Nucleusformation and Polycenters Crystallization With Contour Representation of The Crystal Growing Surface, Sov. Crystal Growth,v. 9 , "Nauka", Moscow, 1972, 268-272.

V.F. Dorfman, About Mechanism and Role of Selectivity in Separated Stages of Growth From Gas or Vapour Phases, Proceeding of the 4 All-Union Conference on Crystal Growth, Erevan, 1972, v.1, 86-89.

V.F. Dorfman, Statistical Model of Multiphases Anisotropic Crystallization, Sov. Crystallography, 18 (1973)1, 154-164.

V.F. Dorfman, To Statistical Kinetic of Multiphases Crystallization, Processes of Growth and Synthesis of Semiconductor Crystals and Films, Novosibirsk, Nauka, 1975, 16-23.

V.F. Dorfman, Mechanism of Starting Stages of Epitaxial Growth, Proceeding of The Moscow Institute of Electronic Technics, 1975, 79-102.

V.F. Dorfman, L.I.Trusov, Role of Electron Processes During Epitaxial Growth From Non-Condenced Phases, Proceeding of The Moscow Institute of Electronic Technics, 1975, 79-102.

V.F. Dorfman, S.A,Petrushinina, M.L.Shupegin, Growth Kinetics and Structure of Epitaxial Garnet Layers as Function of The Mismatch of Crystal Lattice Parameters, Thin Solid Films, 62 (1979) 157-164.

V.F. Dorfman, "A Microscopic Mechanism of Film Growth From Noncondenced Phases". Thin Solid Films,66 (1980) 91-110.

V.F. Dorfman, M.L.Shupegin, Shift in The Phase and Chemical Equilibrium in Oriented Crystallization". J. of Crystal Growth, 52 (1981) 710-715.

V.F. Dorfman, Some Problems of Crystallization from Noncondensed States, Theoretical bases of Chemical Technology, 1 (1967) n.3, 353-359.

V.F. Dorfman, Mathematical Model of Multilayer Structure Growth with "Sandvich Method", Proceeding of Institute of Electronic Control Machines, Moscow, 1967, 127-139.

Thin film growth and physical process in thin films
V.F. Dorfman, S.A.Toporovskii, V.A.Kholmjanskii, Condencation From Molecular Beam on the Macroinhomogeneous Surface, Sov. Crystallography, 17 (1972) 2, 390-394.

V.I.Nefedov, P.P.Pozdeyev, V.F. Dorfman and B.N. Pypkin, X-Ray Photoelectron Study of Thin Evaporated Films of Fe/Ni Alloy, Surface and Interface Analysis, v.2 (1980), n.1, p.26-30.

V.F. Dorfman, A.E.Lukjanov, B.N. Pypkin, I.D.Khan,V.K.Borozdin, N.A.Butilkina, Electron Microscopy Investigation of Fine Structure and Degradation of Permalloy Films, Modern Electron Microscopy in The Investigation of Substance, Moscow, "Nauka", 1982, pp. 127-138.

V.F. Dorfman, S.A.Toporovskii, Selective Condensation from Molecular Beam, Dispersed Metallic Films, First Symposium, Kiev, 1972, 113-122.

V.F. Dorfman, A.E.Lukjanov, B.N. Pypkin, I.D. Khan, N.A. Butilkina, Influence of Physical Parameters of ion-Plasma Deposition on The Properties of FeNi Films, Physical Properties and Applications of Bubble Magnetic Domains, Moscow, 1979, p.61

V.F. Dorfman, A.E. Lukjanov, B.N. Pypkin, I.D. Khan, N.A. Butilkina, Structure and Electromigration in FeNi Films, Memory and Logic Devices, Proceeding of Institute of Electronic Control Machines, Moscow, 1978, 58-62.

Epitaxy of Ge, Si, GaAs, GaP, semiconductor hetero-structures and semiconductor doping during the epitaxial growth
V.F. Dorfman, About Mechanism of Epitaxial Crystallization from Atomic Beam, Sov. Crystallography, 13 (1968)3, 502-507.

V.F. Dorfman, L.S. Sibirtzev, Growth of the Dislocation-free Germanium Layerfrom Gas Phase, Sov. Academic Science Reports, 182 (1968) 2, 372-375.

V.F. Dorfman, K.A.Bolshakov, Epitaxial Crystallization from Gas Phase, News of Academy of Science of USSR, Neorgan. Mater., 4 (1968) n.1, 8-16 (in Rus.).

V.F. Dorfman, I.D.Khan, Transport Reactions During Mutual Epitaxial Growth of Germanium and Silicon, News of Academy of Science of USSR, Neorgan. Mater., 5 (1969) n.7, 1670-1673 (in Rus.).

V.F. Dorfman, B.N. Pypkin, Oriented Growth of GaAs With High Growth Rate of Crystallization, "Gallium Arsenide", Tomsk, 1970, v.3, pp.51-60 (in Rus.).

V.F. Dorfman, B.N. Pypkin, Comparable Investigation of Epitaxial Growth of Gallium Arsenide and Gallium Phosphide in The GaAs-I and GaP-I Systems in The Wide Range of Crystallization Conditions, News of Academy of Science of USSR, Neorgan. Mater., 8 (1972) 1539-1545.

V.F. Dorfman, B.N. Pypkin, A.L.Ocheretjanskii, Influence of the Growth Rate and Crystallization Conditions on the Defects Formation in Epitaxial Layers of GaAs and GaP, Sov. Crystallography, 17 (1972) 6, 1225-1231.

V.F. Dorfman, M.S.Belokogn, B.N. Pypkin, I.D.Khan Crystal Growth, Moscow, "Nauka", Epitaxial Growth in The Extreme Conditions as Method of Investigation of Crystallization Mechanism, Crystal Growth, v.9, 1972, Moscow, "Nauka", 193-197.

V.F. Dorfman, V.N.Maslov, B.A.Sakharov, Producing of Three-Dimensional Integral Structures By Epitaxial Intergrowing of Tungstun Microwire in Germanium and Silicon, and Formation of p-n-junctions With Diffusion of Impurities from W in Semiconductor, Proceeding of GIREDMET, Moscow, 1972.

V..F.Dorfman, V.N.Maslov, V.M.Chernomordin, Producing of Three-Dimensional Integral Optical Structures By Epitaxial Intergrowing of Quartz in Gallium Arsenide and Gallium Phosphide, Proceeding of GIREDMET, Moscow, 1972.

V.F. Dorfman, Some Problems of Growth of Germanium Epitaxial Layers from Gas Phase, Problems of Radioelectronics (in Rus.), s.3 (1964, submitted 1962) n.5, 34-44.

V.F. Dorfman, I.P.Kislyakov, K.A.Bolshakov, Conditions of Germanium Crystallization by Transport Reactions, News of Academy of Science of USSR, Neorgan. Mater., 1 (1965) n.1, 37-45 (in Rus.).

V.F. Dorfman, M.S.Belokogn, G.F.Krasnova, G.N.Tolkacheva, Influence of Growth conditions on The Properties of Germanium Epitaxial Layers, News of Academy of Science of USSR, Neorgan. Mater., 1 (1965) n.7, 1016-1020 (in Rus.).

V.F. Dorfman, I.P.Kislyakov, K.A.Bolshakov, About Reactions Kinetic in The Iodides Method of Germanium Epitaxial Layers Growth, J.of Phys. Chemistry, 39 (1965) n.4, 996-1000 (in Rus.).

V.F. Dorfman, I.P.Kislyakov, K.A.Bolshakov, Doping of Germanium Growing Layers, J.of Phys. Chemistry, 39 (1965) n.5, 1248-1251 (in Rus.).

V.F. Dorfman, I.P.Kislyakov, K.A.Bolshakov, B.M.Nirsha, Mechanism of Codeposition of Stibium and Germanium in The Iodide Process, News of Academy of Science of USSR, Neorgan. Mater., 2 (1966) n.11, 1921-1924 (in Rus.).

V.F. Dorfman, M.S.Belokogn, Mechanism of Germanium Crystallization from Gas Phase, Crystal Growth, Moscow, "Nauka", 1968, Proceeding of 7 International Congress of Crystal growth (Moscow, 1966), 155-163.

V.F. Dorfman, I.P.Kislyakov, K.A.Bolshakov, Producing of Pure Substances with Demanded Properties by Chemical Transport Reactions, Proceeding of The All-Union Conference for Especially Pure Substances, Moscow, 1967. (in Rus.).

V.F. Dorfman, I.D.Khan, Some Problems of Crystallization From Gas and Vapor Phases, Processes of The Growth and Structure of Single Crystalline Semiconductors Layers, Novosibirsk, "Nauka", v.1, 1968, pp. 122-134.

General problems of microelectronics and technology of integral circuits
V.F. Dorfman, L.V.Ivanov, "Ideal Silicon Machine" and Alternative Computers, Sov. Acad.Science Reports, 308 (1989),n.2, p.285-289.

V.F. Dorfman, L.V.Ivanov, Problems of the System Technology of Computers, J. New Gener. Comput. Syst. Berlin. 2(1989)1, 3-23.

Integral Structures Topologically Solvable Without Aligning. Mikroelektronika, 4(1975) n.3,213-219 (Translated from Russian: Plenum Publishing Corp.)

V.F. Dorfman, The Use of Selective Etching and Masking Principles in Integrated-Circuit Manufacture, Mikroelektronika, 5(1976) n.2,99-124 (Translated from Russian: Plenum Publishing Corp. Original article submitted Dec.30, 1974).

V.F. Dorfman, About Topological Preconditions for Integration of Technological Processes in Integral Circuits Production, Activated Process of Microelectronics, v.2, Taganrog, 1976, pp.46-60.

V.F. Dorfman, I.B.Shevchenko, The Problems of Information Density in The Magnetic Bubbles Memory, Devices and Systems of The Control, 1980, n.5, p.36-39 (in Russian).

V.F. Dorfman, Y.D. Rozental, A.Y.Chervonenkis, To design of the functional devices on magnetic bubble domains, Problems of Functional Electronics, 1980, Gorki.

Electronic devices, Computer elements and system optimization of computer hardware
V.F. Dorfman, Technology and parameters of integral germanium diode matrices, Reports of Institute of Electronic Control Machines, Moscow, 1965. The work awarded on the Institute concurs for the best R&D.

V.F. Dorfman, A.I.Kaganovskii, A.N.Karpov, Investigation and Development of Memory Device with Superconducting Thin Films Cryotrons, Report of the Institute of Electronic Control Machines, Moscow, 1967, 200 p.

V.F. Dorfman, L.S.Sibirtzev, M.S.Belokogn, Z.I.Ivanova, O.T.Tikhonova, A.A.Pshegorskaja, A.M.Tikhonova, V.V.Sevastjanov, Investigation and Development of The Low Noising Avalanched Diode Arrangement for Analysis of The Space Connection Sygnals, Joint Report of Institute of Electronic Control Machines and Institute "Pulsar", Moscow, 1969, 250 p.

V.F. Dorfman, M.S.Belokogn, O.T.Tikhonova, V.V.Sevastjanov, B.M.Novoselov. Research and development of The Special Highly Reliable Hybrid Elements for Large Computers, Reports of Institute of Electronic Control Machines, Moscow, Part 1, 1967; Part 2, 1968, part 3, 1969, Part 4, 1970.

V.F. Dorfman, I.V.Korotkov, Perspectives of Creation of Special Microcircuits For Controlling Computer Complex, Proceeding of Institute of Electronic Control Machines, Jubilee Volume, Moscow, 1970, 279-285.

V.A.Akimov, M.S.Belokogn, A.M.Vasiljev, V.F. Dorfman, Investigation and Development of The Planar Phototransistors and Phototransistor Matrixes, Report of Institute of Electronic Control Machines, Moscow, 1972, 150

V.F. Dorfman, B.N. Pypkin I.D.Khan, Research and Development of GaP Light-emitting diodes and hybrid integral digit displays. Report of Institute of Electronic Control Machines, Moscow, 1972, 150 p.

V.F. Dorfman, L.I.Trusov, About Diffusion-Drift Instability of Microelectronic Structures with Thin Dielectric Layer, Microelectronics and Physico-Technological Problems of Devices Industry, Institute of Electronic Control Machines, Moscow, 1972, 26-36.

V.F. Dorfman, B.N. Pypkin, J.V.Grigorjev, Investigation and Development of The Holographic Memory Device, Report of Institute of Electronic Controlling Machines, Moscow, 1973.

V.F. Dorfman, Project of The Holographic Memory Disk, Report of Institute of Electronic Controlling Machines, Moscow, 1974.

V.F. Dorfman, G.A. Krilov, A.I. Lomov, Contact-free detector of currents in printing boards based on giant magneto-resistive effect in NiSb-InSb superlattices. Report of Institute of Electronic Controlling Machines, Moscow, 1976.

V.F. Dorfman, J.V. Grigorjev, B.N. Pypkin, G.A. Krylov, Latent Defects of The Computer Parts, and Methods of Their Uncovering, Problems of Automatization of Logical Circuits Control, Proceeding of Institute of Electronic Control Machines, Moscow, 1977, 63-78.

V.F. Dorfman, B.N. Pypkin, Methods of Controlling Programming Commutation for Modelling of The Computer Parts, Problems of Automatization of Logical Circuits Control, Proceeding of Institute of Electronic Control Machines, Moscow, 1977, 58-62.

V.F. Dorfman, I.N. Serogodski, Examination of the dominant mechanisms of failures of bipolar IC and specific factors of those failures acceleration during the testing. Proceeding of Institute of Electronic Control Machines, Moscow, 1977.

V.F. Dorfman, Fundamental Physical limits of Integration of Computers' Elements. In: Physical-Technological Problems of Microelectronics Industry, Ed. by Dorfman, Proceeding of Institute of Electronic Control Machines, Moscow, 1983, 6-24.

V.F. Dorfman, E.V.Keshek, E.N.Philinov, Physical Means for Ensuring of Reliability of Electron Devices, Physical-Technological Problems of Microelectronics Industry, Ed. by Dorfman, Proceeding of Institute of Electronic Control Machines, Moscow, 1983, 98-108.

V.F. Dorfman, A.E.Lukjanov, N.A.Butilkina, S.A.Petrushinina, Correlation of The Observed and Hidden Defects of Microcircuits With SEM Analysis Data., Proceeding of The 6th All-Union Symposium for SEM and Analytical Methods of Solid State Investigations, Moscow, 1984, p.12-13.

V.F. Dorfman, E.V.Keshek, S.A.Petrushinina, S.A.Toporovskii, Investigation of The Mechanisms and The Real Statistical Distribution of The Microelectronics Elements Failures, Proceeding of Institute of Electronic Control Machines, Moscow, 1987.

V.F. Dorfman, I.O.Doronin, S.A.Petrushinina. Examination of nonlinear electrical phenomena in the thin-films conductors at the super-high current densities prospective for creation of the superfast fuses on the "phonon hetero-junction". Joint report of Institute of Electronic Control Machines and Institute of nuclear Energy. Moscow, 1989.

V.F. Dorfman, E.V.Keshek, B.G.Belkin, Theoretical and experimental examination of thermal-mechanical stress in IC and optimization of their testing. Proceeding of Institute of Electronic Control Machines, Moscow, 1987.

Books in series "Science-popular for professional" (in Russian)
V.F. Dorfman, Solid State Integral Structures and their Synthesis, "Znanie", Moscow, 1981.

V.F. Dorfman, L.I.Ivanov, Optimized Development of Electronic Elements an Computer Hard Ware, "Znanie", Moscow, 1986

V.F. Dorfman, On the Border of Millenium, "Znanie", Moscow, 1982.

V.F. Dorfman, Technological Base of Informatic, "Znanie", book in the series on the computer technics, Moscow, 1989

V.F. Dorfman, Microelectronics: From Microtechnology to Nanotechnology, book in the series on: "Era of New Technologies", "Znanie", Moscow, 1989

V.F. Dorfman, Evolution of Microelectronics Technology and Micromechanics, "Znanie", Moscow, 1985.

V.F. Dorfman, Microelectronics: From Microtechnology to Nanotechnology - goals, search, fantasy and reality. "Znanie", Moscow, 1989.

V.F. Dorfman, Evolution of Technology or New History of the Time. NANOTECHNOLOGY: What would be expected behind of the nano-border? "Znanie", Moscow, 1990.

A scientific-fiction book.
Thought Embraced in Crystal (A parallel history of the informatics' technologies and civilization). V.F. Dorfman, Moscow, 1988, 200 p.

General Publications
V.F. Dorfman, Microelectronics: Technological Progress, Coming merger of nano-electronics and biotechnology and the problems of Humanity. "Znanie", Computers, v.2. : Moscow, 1989.

Principles of Technology of XX Century and Technology of Information, Akad. K.V.Frolov and Dr. V.F. Dorfman Ed., Moscow, 1986.

Handbook of Scientifical-Technical Progress, (in Rus.), Moscow, 1987. 36 articles by V.F. Dorfman and 5 articles by Dorfman with coauthors.

Physical Encyclopedia, Moscow, v.1-5, 1988-1992. Articles: Microelectronics, Integral Circuits, Planar Technology, Photolithography.

Encyclopedia of Solid State Physics., Kiev, 1989 10 articles by V.F. Dorfman

V.F. Dorfman, About Scientific Bases for Development of Technology, Problems of Phylosophy, 1985, n.5, 116-124. Invited Article.

V.F. Dorfman, Creation and development of microelectronics, History of Radiotechnics, v.3, Science, Moscow, 1989.

V.F. Dorfman, M.Lebedev, Development of semiconductor technology, in: Technique in its historical development, Science, Moscow.

V.F. Dorfman, Evolution of Technology. How to avoid catastrophe on the staircase of the crisis. Invited article. Moscow-Paris. J. of History of technology. 1990.

V.F. Dorfman, The Technology of the 20th century as a border of evolution. History and Technology, 1992, v. 8, pp. 87-108, Harwood Academic Publishers GmbH, UK.

Earlier works
Super-fast Cooperative/Competitive Growth of Populations of Silver Whiskers near physical limit of crystal growth rate. Discovered in 1955 during amateur school research. Published 25 years afterwards (Chemistry and Life, 1980, N9, pp.80-85), while promoting productive academic discussion.

Producing of high-purity ductile tantalum by super-high temperature carbon reduction in vacuum. Student research. (First realization of Moissan method for tantalum) 1956-1957.

New technology of titanium combining high-temperature high-pressure metal-thermal reduction, high-temperature electrolysis and vacuum-arc melting. Student research and graduate work for Master degree, 1958-1961. Exhibit in Moscow Polytechnic Museum.