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S.V. Babu Phone: 315-268-2336 Clarkson
University » CAMP - A NY State CAT » Faculty
& Staff » S.
V. Babu PUBLICATIONS IN JOURNALS 1. Quantum corrections to the
second virial coefficient of a Stockmayer
gas: M. McCarty Jr., and S.V. Babu, J. Phys. Chem.,
74, 1113 (1970). 2. On moment conserving decoupling
approximations for one electron propagators: S.V. Babu
and M. Ratner, J. Chem. Phys., 57, 3156
(1972). 3. Quasiparticle
interaction in liquid 3He: S.V. Babu and G. E.
Brown, Ann. Phys., 78, 1 (1973). 4. Nuclear spin lattice relaxation
in CH 4 inert gas mixtures: S. Rajan, K. Lalita and S.V. Babu, J. Mag. Reson., 16, 115 (1974). 5. Vibrational
deactivation of CO 2( n 3 ) by ethane: I.V. Rao, Y.V.C. Rao, S.V. Babu and V. Subba Rao, Chem. Phys. Lett., 28,
501 (1974). 6. Intermolecular potentials and NMR
data: I. CH 4 CO 2 and CH 4 N 2: S. Rajan,
K. Lalita and S.V. Babu,
Can. J. Phys., 53, 1624 (1975). 7. Intermolecular potentials and
NMR data: II. CH 4, CF 4 and SiF 4: S. Rajan, K. Lalita and S.V. Babu, Can. J. Phys., 53, 1631 (1975). 8. Resonance energy exchange
effects in atmospheric transmission due to pollutants: S.V. Babu, Y.V.C. Rao and V. Subba Rao, Chem. Phys. Lett., 37, 253 (1976). 9. Determination of composition of
a gas mixture and the study of reactions using laser induced fluorescence:
S.V. Babu and Y.V.C. Rao,
Chem. Phys. Lett., 37, 249 (1976). 10. Collisional
transfer of energy in CO 2 ethylene oxide mixtures: P.R.M. Rao, Y.V.C. Rao, S.V. Babu and V. Subba Rao, Indian J. Phys., 50, 259 (1976). 11. CO chemical laser: G.S. Kishore, K.M.S. Prasad, S.V. Babu
and V. Subba Rao, Ind. J.
Pure and Appl. Phys., 15, 855 (1977). 12. V-V energy transfer studies in
CO 2 hydrocarbon mixtures: I.V. Rao, S.V. Babu, Y.V.C. Rao, V. Subba Rao and K. Lalita, J. Chem. Phys., 68, 2933 (1978). 13. Steady state dissociation of
shock heated HCl, HF and CO: M. Ramakrishna and
S.V. Babu, J. Chem. Phys., 68, 163 (1978). 14. Diatomic dissociation: Effects
of weak bias and anharmonicity: M. Ramakrishna and
S.V. Babu, Chem. Phys. Lett.,
57, 557 (1978). 15. Dissociation rates of shock
heated CO and HCL diluted with Ar: M. Ramakrishna
and S.V. Babu, Chem. Phys., 36, 259 (1979). 16. Is rotational energy
responsible for weak bias in diatomic dissociation? M. Ramakrishna and S.V. Babu, Chem. Phys., 42, 325 (1979). 17. Kinetics of step
polymerization with unequal reactivities: K.S.
Gandhi and S.V. Babu, AIChE
J., 25, 266 (1979). 18. Step polymerization with
unequal reactivities of functional groups: K.S.
Gandhi and S.V. Babu, Macromolecules, 13,
791 (1980). 19. Measurement of relaxation
rates in pure SO 2 and SO 2 Ar mixtures behind
incident shock waves: V.V.N. Kishore, S.V. Babu and V. Subba Rao, Chem. Phys., 46, 297 (1980). 20. Dissociation rate measurements
in SO 2+Ar mixtures behind incident shock waves: M. Tyagaraju,
S.V. Babu and V. Subba Rao, Chem. Phys., 48, 411 (1980). 21. Deactivation of CO 2( n 3 ) by some polyatomic molecules: P.R.M. Rao, Y.V.C. Rao, S.V. Babu and V. Subba Rao, Chem. Phys. Let., 71, 485 (1980). 22. V V
energy transfer studies in CO 2( n 3 ) – alcohols: P.R.M. Rao,
S.V. Babu, V.S. Rao and
Y.V.C. Rao, Chem. Phys., 55, 215 (1981). 23. Feasibility study of a large
scale power generation system based on “Concentration Difference Energy”:
D.P. Rao, S.V. Babu and
V.S. Rao, Solar Energy, 27, 313 (1981). 24. A computationally simple model
for multiphoton induced chemical processes: R.J. McCluskey and S.V. Babu, J.
Phys. Chem., 86, 3210 (1982). 25. Homogeneous nucleation
kinetics: D.H. Rasmussen, M.R. Appleby, G.L. Leedom,
S.V. Babu and R.J. Naumann,
J. Crystal Growth, 64, 229 (1983). 26. A corresponding states
correlation for nucleation from the vapor: D.H. Rasmussen and S.V. Babu, Chem. Phys. Lett., 108,
449 (1984). 27. Cross linking photoresists – effect of frequency of radiation on uniformity
of cross linking and contrast: V. Srinivasan
and S.V. Babu, Photographic Sci. and Engg., 28,
175 (1984). 28. Thermal degradation of polyisobutylene – effect of sample size on weight loss:
V. Srinivasan and S.V. Babu,
Polymer J., 17, 525 (1985). 29. Representation and calculation
of three liquid phase equilibria of two ternary
systems: T. Chakravarty, M.S. Sivasubramanian
and S.V. Babu, Fluid Phase Equilibria,
19, 221, (1985). 30. A simple model for predicting
contrast of photoresists: S.V. Babu
and V. Srinivasan, IEEE Trans. Electron Dev., ED
32, 1896 (1985). 31. Effect of sample size and
environment on thermal degradation of polymers: V. Srinivasan
and S.V. Babu, Polymer Degradation and Stability, 13,
77 (1985). 32. Characterization of positive photoresist performance: S.V. Babu
and V. Srinivasan, J. Imaging Tech., 11, 168
(1985) (Invited Paper). 33. Equation of state calculations
for CO 2, C 2H 4 and N 2 using perturbation theory: Effect of damping the quadrupole quadrupole and
induced quadrupole series at small intermolecular
separations: R. Mohan, D.P. Rao and S.V. Babu, Fluid Phase Equilibria, 25,
171(1986). 34. Exact solution of Dill’s model
equations for positive photoresist kinetics: S.V. Babu and E. Barouch, IEEE
Electron Dev. Lett., EDL 7, 252 (1986).
35. Exact solution for the
kinetics of the image reversal process: S.V. Babu,
IEEE Electron Dev. Lett., EDL 7, 250
(1986). 36. Excimer
laser etching of polymers: V. Srinivasan, M.A. Smrtic and S.V. Babu, J. Appl.
Phys., 59, 3861 (1986). 37. Effect of process parameters
on the contrast of positive photoresists: V. Srinivasan and S.V. Babu, J. Electrochem. Soc., 133, 1686 (1986). 38. Exact solution for the optical
absorbance of thin films: S.V. Babu and E. Barouch, Studies in Appl. Math., 77, 173 (1987). 39. Exposure bleaching of
nonlinear resist materials: Exact solution: S.V. Babu
and E. Barouch, IEEE Electron Dev. Lett., EDL-8, 401 (1987). 40. 193 nm excimer
laser assisted etching of polysilicon: M.D. Armacost, S.V. Babu, S.V. Nguyen
and J.F. Rembetski, J. Mater. Res., 2, 895
(1987). 41. Calculation of image profiles
for contrast enhanced lithography: S.V. Babu, E. Barouch and B. Bradie, J. Vac.
Sci. and Tech., B6, 564 (1988). 42. Standing waves in optical
positive photoresist films: S.V. Babu and E. Barouch, J. Opt.
Soc. America, 5, 1460 (1988). 43. Resist development described
by least action principle: E. Barouch, B. Bradie and S.V. Babu, J. Vac.
Sci. and Tech., B6, 2234 (1988). 44. Optical Microlithography: Some
analytic results: S.V. Babu and E. Barouch, J. Imaging Sci., 33, 193 200 (1989).
45. A three dimensional profile
modeling algorithm for positive photoresists: E. Barouch, B. Bradie and S.V. Babu, J. Vac. Sci. and Tech., B7, 1766 1770
(1989). 46. Simulation of three
dimensional positive photoresist images: E. Barouch, B. Bradie and S.V. Babu, Jap. J. Appl. Phys., 28, 2624 (1989). 47. Kinetic aspects of plasma
etching of polyimide in CF 4/O 2 discharges: P.M. Scott, S.V. Babu, R.E. Partch, and L.J. Matienzo, Polymer Degradation and Stability, 27,
169 (1990). 48. CF 4/O 2 plasma etching and
surface modification of polyimide films: Time dependent surface fluorination
and fluorination model: P.M. Scott, L.J. Matienzo
and S.V. Babu, J. Vac. Sci. and Technol., A8,
2382 (1990). 49. Plasma enhanced deposition of AlN fine powder and films: M. David, S.V. Babu and D.H. Rasmussen, AIChE
J., 36, 871 (1990). 50. Ultraviolet reflectance of
DLC, AlN, and SiC thin
films: M. David, S.V. Babu, M.I. Chaudhry, and B. Flint, Appl. Phys. Lett.,
57, 1093 (1990). 51. A two step regression
procedure for the optical characterization of thin films: S.V. Babu, M. David, and R.C. Patel, Appl. Optics, 30,
839 (1991). 52. Excimer
laser-induced deposition of copper films: S.V. Babu,
R. Padiyath, M. David, and L. Walsh, AIChE J., 37, 150 (1991). 53. RIE of Monocrystalline,
Polycrystalline, and Amorphous SiC in CF 4/O 2
Mixtures: R. Padiyath, R.L. Wright, M.I.Chaudhry, and S.V. Babu, Appl.Phys. Lett., 58,1053 (1991). 54. Plasma deposition and etching
of diamondlike carbon films: M. David, R. Padiyath, and S.V. Babu, AIChE J., 37, 367 (1991). 55. Observation of the internal
morphology of polystyrenic materials using oxygen
plasma etching: N.S. Ramesh, R. Padiyath,
G.A. Campbell, and S.V. Babu, J. Polym. Sci., Part B, Polym.
Phys., 29, 1031 (1991). 56. Laser-induced deposition of Cu
and Pb powders: D. Narasimharao,
S.V. Babu and D.H. Rasmussen, J. Materials Res.,
7, 1104 (1992). 57. Effect of diluents added
during deposition on the etching characteristics of diamondlike
carbon films: J. Seth, R. Padiyath, S.V. Babu, and M. David, Thin Solid Films, 212, 251
(1992). 58. Influence of the deposition
gas mixture on the structure and failure modes of diamondlike
carbon films: J. Seth, R. Padiyath, and S.V. Babu, J. Vac. Sci. and Technol., A10, 284 (1992). 59. Electrical characteristics of
plasma deposited diamondlike carbon/silicon
metal-insulator- semiconductor structures: J. Seth, M.I. Chaudhry,
and S.V. Babu, J. Vac. Sci. and Technol. A10,
3125 (1992). 60. Enhancement of sp 3/sp 2 ratio
in plasma deposited amorphous hydrogenated carbon films by the addition of
ammonia: J. Seth, A.J. Ward, and S.V. Babu, Appl.
Phys. Lett., 60, 1957 (1992). 61. Excimer
laser induced ablation of poly(etheretherketone),
polyimide, and poly(tetrafluoro ethylene): S.V. Babu, G.C. D’Couto, and F.D. Egitto, J. Appl. Phys., 72, 792 (1992). 62. Effects of inert gas dilution
of 1,3 Butadiene on the characteristics of plasma
deposited a:C-H films: J. Seth and S.V. Babu, J.
Appl. Phys. 73, 2496 (1993). 63. Deposition of copper films on
silicon substrates by plasma-induced reduction of copper formate:
film purity and silicide formation: R. Padiyath, J. Seth, S.V. Babu,
and L.J. Matienzo, J. Appl. Phys. 73, 2326
(1993). 64. The use of thin film
thermocouples to determine the thermal conductivity and the Young’s modulus
of coatings and interfaces: S. Krishnan, S.V. Babu,
R. Bowen, L.P. DeMejo, H. Osterhoudt,
and D.S. Rimai, J. Adhesion, 42, 103 (1993).
65. Comparison of laser and O 2
plasma etching of DLC films: V.G. Ralchenko, T.V. Kononenko, T. Foursova, E.N. Loubin, V.E. Strelnitsky, J.
Seth, and S.V. Babu, Diamond and Related Mater., 2,
211 (1993). 66. Optical emission from the
laser-induced plasma during KrF laser etching of diamondlike carbon films: J. Seth, R. Padiyath,
and S.V. Babu, Appl. Phys. Lett.,
63, 126 (1993). 67. Laser-plasma deposition of
diamond phase at low temperatures: J. Seth, R. Padiyath,
D.H. Rasmussen, and S.V. Babu, Appl. Phys. Lett., 63, 473 (1993). 68. Fluorohydrogenated
amorphous carbon (a-C:H,F) films prepared by the rf plasma decomposition of 1,3 butadiene and carbon tetrafluoride: J. Seth and S.V. Babu,
Thin Solid Films, 230, 90 (1993). 69. Laser-induced ablation of
polyimide-doped poly(tetrafluoroethylene) at 248 nm
and 308 nm: G.C D’Couto, S.V. Babu,
F.D. Egitto, and C.R. Davis, J. Appl. Phys., 74,
5972 (1993). 70. Incorporation of nitrogen in diamondlike carbon films: J. Seth, R. Padiyath,
and S.V. Babu, Diamond and Related Materials, 3,
211 (1994). 71. Deposition of copper oxide
films by reactive laser ablation of copper formate
in an rf oxygen plasma ambient: R. Padiyath, J. Seth, and S.V. Babu,
Thin Solid Films, 239, 8 (1994). 72. Structural-modification
mechanism for polyimide-doped poly(tetrafluoroethylene)
at sub-threshold fluences using 248 nm pulses: C.R.
Davis, R.W. Snyder, F.D. Egitto, G.C. D’Couto and S.V. Babu, J. Appl.
Phys., 76, 3049 (1994). 73. Heat transfer and material
removal in pulsed UV laser-induced ablation of polymers: pulsewidth
dependence: G.C. D’Couto and S.V. Babu, J. Appl. Phys., 76, 3052 (1994). 74. Lithographic application of diamondlike carbon films: J. Seth, S.V. Babu, V.G. Ralchenko, T.V. Kononenko, V.P. Ageev, and V.E.
Strelnitsky, Thin Solid Films, 254, 92
(1995). 75. Excimer
laser etching of diamond-like carbon films: Spalling
effect: T.V. Kononenko, V.G. Ralchenko,
E.D. Obraztsova, V.I. Konov,
J. Seth, S.V. Babu, and E.N. Loubnin,
Appl. Surf. Sci., 86, 234 (1995). 76. The effects of laser radiation
at 248nm on the surface characteristics and joint properties of aluminum adherends: E. Sancaktar, S.V. Babu, E. Zheng, G.C. D’Couto, and H. Lipshitz, J.
Adhesion, 50, 103 (1995). 77. Excimer
laser-induced crystallization and doping of amorphous SiGe
films: S. Krishnan, M.I. Chaudhry, and S.V. Babu, J. Materials Res., 10, 1884 (1995). 78. Excimer
laser-induced doping of crystalline silicon carbide films: S. Krishnan, G.C. D’Couto. M.I. Chaudhry, and
S.V. Babu, J. Materials Res., 10, 2723
(1995). 79. Synthesis of silicon nitride
particles in pulsed rf plasmas: R.J. Buss and S.V. Babu, J. Vac. Sci. and Tech., B14, 577 (1996). 80. Stabilization of alumina
slurry for chemical-mechanical polishing of copper: Q. Luo,
D.R. Campbell and S.V. Babu, Langmuir, 12, 3563
(1996). 81. Corrosion resistance of diamondlike carbon film-coated aluminum films: C.V. Srividya and S.V. Babu,
Chemistry of Materials, 8, 2528 (1996). 82. Investigation of pad
deformation and conditioning during the chemical-mechanical polishing of
silicon dioxide films: K. Achuthan, J. Curry, M.
Lacy, D. Campbell, and S.V. Babu, J. Electronic
Materials, 25, 1628 (1996). 83. A review of some properties
and applications of diamondlike carbon films: C.V. Srividya and S.V. Babu, J.
Energy, Heat and Mass Transfer, 19, 39 (1997). Surface and bulk compositional
characterization of plasma-polymerized fluorocarbon films prepared from hexafluoroethane and acetylene or butadiene reactant
gases: S.A. Visser, C.E. Hewitt, J. Fornalik, C. Braustein, C.V. Srividya, and S.V. Babu, J.
Appl. Poly. Sci., 66, 409 (1997). 85. Composition and surface
energies of plasma-deposited multilayer fluorocarbon thin films: S.A. Visser, C.V. Srividya, and S.V.
Babu, Surface Coatings and Technology, 96,
210 (1997) 86. Resistance of plasma-deposited
a-C:H/fluorocarbon films to anodic breakdown in
aqueous electrolytes : C. Srividya, M. Sunkara and S.V. Babu, J.
Materials Res., 12, 2099 (1997). 87. Corrosion protection ability
of plasma-deposited a-C:H and fluorocarbon films: C.
Srividya, M. Sunkara, and
S.V. Babu, J. Materials Engg.
And Performance, 6, 586(1997) 88. Chemical-mechanical polishing
of copper in alkaline media: Q. Luo, D.R. Campbell
and S.V. Babu, Thin Solid Films, 311, 177
(1997). 89. Copper dissolution in aqueous
ammonia-containing media during chemical-mechanical polishing: Q. Luo, R. Mackay, and S.V. Babu,
Chemistry of Materials, 9, 2101 (1997) 90. Surface and corrosion
characteristics of a-C:H/fluorocarbon films: C. Srividya, S.V. Babu and S.A. Visser, J. Adhesion, 67, 81 (1998). 91. Modification of the Preston
equation for the chemical-mechanical polishing of copper: Q. Luo, S. Ramarajan, and S.V. Babu, Thin Solid Films, 335, 160 (1998). 92. Development of a CD-ROM on
thin film technologies: Design, Usability assessment and Challenges: S.V. Babu, I.I. Suni, D. Rasmussen, J. Engg. Education, 583, 1998
Supplement. 93. Anodic dissolution of diamondlike carbon film-coated type 301 stainless steel:
C. Srividya, I. Moskowitz
and S.V. Babu, J. Materials Res., 14, 2124 (1999)
94. Hardness of sub-micron
abrasive particles and polish rate measurements: S. Ramarajan,
M. Hariharaputhiran, Y.S. Her, and S.V. Babu, Surface Engineering, 15, 324 (1999) 95. Transport phenomena in
chemical-mechanical polishing: R.S. Subramanian, L. Zhang, and S.V. Babu, J. Electrochem. Soc.,
146, 4263 (1999) 96. Structure and electrochemical
characteristics of metal doped diamondlike carbon
films: P. Koduri, M. Sunkara,
E.C. Dickey, C. Frazier, and S.V. Babu, Surface
Engineering, 15, 373 (1999) 97. The role of alumina particle
density in the chemical-mechanical polishing of copper, tantalum and tungsten
disks and films: S. Ramarajan, M. Hariharaputhiran, Y.S. Her, and S.V. Babu,
J. CMP for On-Chip Interconnection, 1, 28 (1999) 98. Chemical-mechanical polishing
of Ta films: M. Hariharaputhiran, S. Ramarajan, Y.Li, and S.V. Babu, Electrochem. and Solid
State Letters, 3, 95 (2000) 99. Hydroxyl radical formation in
H 2O 2-aminoacid solutions and chemical-mechanical polishing of Cu: M. Hariharaputhiran, J. Zhang, Y. Li, and S.V. Babu, J. Electrochem. Soc., 147,
3820 (2000) 100. Effect of pH and ionic
strength on chemical-mechanical polishing of Ta: S. Ramarajan,
Y. Li, M. Hariharaputhiran, and S.V. Babu, Electrochem. and Solid
State Letters, 3, 232 (2000) 101. Dishing effects during
chemical-mechanical polishing of copper in acidic slurries: Q. Luo and S.V. Babu, J. Electrochem. Soc., 147, 4639 (2000) 102. Chemical-mechanical polishing
of copper and tantalum films in potassium iodate-based
slurries: Ying Li and S.V. Babu, Electrochem. and Solid State Letters, 4, G20
(2001) 103. Surface morphology and
quality of a-Si:C:H: films: I. Moskovitz
and S.V. Babu, Thin Solid Films, 385, 48
(2001) 104. Chemical-mechanical polishing
of Cu and Ta films using silica abrasives: Y. Li, M. Hariharaputhiran,
and S.V. Babu, J. Mater. Res., 16, 1066
(2001) 105. Chemical mechanical
planarization of Cu and Ta: S.V. Babu, Y. Li, and
A. Jindal, JOM, 53, 50, (2001) 106. Chemical-mechanical polishing
using mixed abrasive slurries: A. Jindal, S. Hegde, and S.V. Babu, Electrochem. and Solid State
Letters, 5, G48 (2002). 107. Chemical mechanical polishing
of thermal oxide films using silica particles coated with ceria: S-H Lee, Z.
Lu, S.V. Babu, and E. Matijevic',
J. Materials Res. 17, 2744 (2002) 108. Effect of pH and H2O2 on Ta
CMP: Electrochemistry and XPS Studies: S. C. Kuiry,
S. Seal, W. Fei, J. Ramsdell,
V. Desai, S.V. Babu and Y. Li, J. Electrochem. Soc., 150, C36 (2003) 109. The effects of process
variables on properties and composition of a-Si:C:H
films: I. Moskowitz, W. Lanford,
and S.V. Babu, J. Materials Res. 18, 129 (2003) 110. Mixed abrasive slurries for
dielectric film polishing: A. Jindal, S. Hegde, and S.V. Babu, J. Electrochem. Soc., 150, G314 (2003) 111. The use of monodispersed colloids in the polishing of Copper and
Tantalum: Z. Lu, S-H Lee, S.V. Babu, and E. Matijevic, J. Colloid and Interface Sci. 261, 55 (2003) 112. Pattern density dependence of
polish rates in fixed abrasive polishing: V. Gorantla,
R. Venigalla, L. Economicos,
D. O’Connor, and S.V. Babu, J. Electrochem.
Soc. 150, G821 (2003) 113. Mechanism and an empirical
model of fixed abrasive polishing process on a web-format tool: R. Venigalla, L. Economicos, and
S.V. Babu, J. Mater. Res. 18, 1659 (2003) 114. Removal of shallow and deep
scratches and pits from copper wafers: S. Hegde and
S.V. Babu, Electrochem.
and Solid State Letters, 6, G126 (2003) 115. Effect of mixed abrasives in
chemical mechanical polishing of oxide films: Z. Lu, S-H Lee, V.R. Gorantla, S.V. Babu, and E. Matijevic, J. Mater. Res. 18, 2323 (2003) 116. Chemical role of
peroxide-based alkaline slurries in chemical-mechanical polishing of Ta:
Investigation of surface reactions using time resolved impedance
spectroscopy: K.A. Assiongbon, S.B. Emery, C.M. Pettit. S.V. Babu and D.
Roy, Materials Chem. And Phys. 86, 347 (2004) 117. Relative Roles of H2O2 and Glycine in Chemical Mechanical Polishing of Copper
Studied with Impedance Spectroscopy: J. Lu, J.E. Garland, C.M. Pettit, S.V. Babu, D. Roy, J. Electrochem. Soc., 151, G717 (2004) 118. Effect of pH on
chemical-mechanical polishing of Cu and Ta: A. Jindal
and S.V. Babu: J. Electrochem.
Soc., 151, G709 (2004) 119. Slurry additive effects on
the suppression of silicon nitride removal during chemical-mechanical
polishing: W.G. America and S.V. Babu, Electrochem. and Solid State Lett.,
7, G327 (2004) 120. Study of surface charge
effects on oxide and nitride planrization using
alumina/silica mixed abrasive slurries: S. Hegde and
S.V. Babu, Electrochem.
and Solid State Lett., 7, G317 (2004) 121. Chemical effects in
chemical-mechanical planarization of TaN:
Investigation of surface reactions in a peroxide-based alkaline slurry using
Fourier transform impedance spectroscopy: V.R.K. Gorantla,
S. B. Emery, S. Pandija, S.V. Babu,
D. Roy, Materials Letters, 59, 690 (2005) 122. Amino acids as complexing agents during chemical mechanical
planarization of Cu: V.R.K. Gorantla, E.Matijevic, and S.V. Babu,
Chemistry of Materials, 17, 2076 (2005) 123. Oxalic acid as a complexing agent in copper planarization slurries: V.R.K.Gorantla, A. Babel. S, Pandija
and S. V. Babu, Electrochem.
And Solid State Lett. 8, G131 (2005) 124. Citric acid as a complexing agent in chemical-mechanical planarization of
copper: Investigation of surface reactions using impedance spectroscopy: V.
R. K. Gorantla, K. A. Assiongbon,
S. V. Babu, and D. Roy, J. Electrochem.
Soc., 152, G404 ( 2005) 125. Voltage initiated material
removal for electrochemical mechanical planarization of copper in NO3-, glycine and H2O2 containing electrolytes: P.C. Goonetillake, S.V. Babu and D.
Roy, Electrochem. And Solid State Lett. 8, G190 (2005) 126. Particle adhesion studies
relevant to chemical mechanical polishing: Zhenyu
Lu, Niels P. Ryde, S.V. Babu, and E. Matijevi, Langmuir
21, 9866 (2005) 127. Chemical-mechanical polishing
of Copper using Molybdenum dioxide slurry: S. Hegde,
U. Patri and S.V. Babu,
J. Mater. Res. 20, 2553 (2005) 128. The role of amine and
carboxyl functional groups of complexing agents in
slurries for chemical mechanical polishing of copper: V.R. Gorantla, D. Goia, E. Matijevi, and S.V. Babu, J. Electrochem. Soc. 152, G912 (2005) 129. Ammonium dodecyl
sulfate as a dissolution inhibitor surfactant for electrochemical mechanical
planarization of copper: Y. Hong, D. Roy and S.V. Babu,
Electrochem. & Solid State Lett.,
8, G297 (2005) 130. Utility of dodecyl sulfate surfactants as dissolution inhibitors in
chemical mechanical planarization of copper: Y. Hong, U.B. Patri, S. Ramakrishnan, D. Roy
and S.V. Babu: J. Materials Res., 20, 3413 (2005) 131. Electrochemical impedance
characteristics of Ta/Cu contact regions in polishing slurries used for
planarization of Cu and Ta: K.A. Assiongbon, S.B.
Emery, V.R.K.Gorantla, S.V. Babu
and D. Roy, Corrosion Science, 48, 372 (2006) 132. Interaction between abrasive
particles and films during chemical-mechanical polishing of copper and
tantalum: Ying Li, Junzi Zhao, Ping Wu, Yong Lin,
S.V. Babu and Yuzhuo Li
Thin Solid Films, 497, 321-328 (2006) 133. Role of the functional groups
of complexing agents in copper slurries: Udaya Patri, Serdar Aksu and S.V. Babu: J. Electrochem. Soc. G650
(2006) 134. Comparison of dicarboxylic acids as complexing
agents for abrasive-free chemical mechanical planarization of copper: S. Ramakrishnan, S.B. Janjam, U.B.
Patri, D. Roy, and S.V. Babu,
Microelectronic Engineering 84, 80-86 (2007). 135. A model of pad – abrasive
interactions in chemical mechanical polishing: E. Paul, J. Horn, Ying Li and
S.V. Babu, Electrochem.
& Solid State Lett. 10, H131 (2007) 136. Chemical-mechanical
planarization of copper using abrasive free solutions of oxalic acid and
hydrogen peroxide: S. Pandija, D. Roy and S.V. Babu, Materials Chem. And Phys. 102, 144 (2007) 137. Synergistic Roles of Dodecyl Sulfate and Benzotriazole
in Enhancing the Efficiency of Chemical-Mechanical Planarization of Copper:
Y. Hong, V. K. Devarapalli, D. Roy and S.V. Babu: J. Electrochemical Soc. 154, H444 (2007) 138. Colloidal aspects of chemical
mechanical planarization: E. Matijevic' and S.V. Babu, J. Colloid and Surf. Sci. 320, 219 (2008) 139. Oxalic Acid Based Slurries
with Tunable Selectivity for Copper and Tantalum Removal in CMP: S. B. Janjam, C. Surisetty, S. Pandija, D. Roy, S.V. Babu, Electrochem. & Solid State Lett.,
11, H66 (2008) 140. Investigation of dissolution
inhibitors for electrochemical mechanical planarization of copper using beta-alanine as a complexing agent:
B. K. Klug, C. M. Pettit, S. Pandija, S. V. Babu, and D. Roy, J Applied Electrochemistry 38, 1347
(2008) 141. Dissolution Inhibition in
Cu-CMP using Dodecyl-benzene-sulfonic
Acid Surfactant with Oxalic Acid and Glycine as Complexing Agents: C. Surisetty,
P. Goonetilleke , D. Roy and S.V. Babu, J. Electrochem. Soc. 155,
H971 (2008) 142. Tartaric Acid as a Complexing Agent for Selective Removal of Tantalum and
Copper during Planarization: S. B. Janjam, S. Peddeti, D. Roy and S.V. Babu, Electrochem. & Solid State Lett.
11, H327 (2008) 143. Achievement of high planarization
efficiency in planarization of copper at a reduced down pressure: S. Pandija, D. Roy, S.V. Babu,
Microelectronic Engg., 86, 367 (2009) 144. Selective Polishing of polysilicon during fabrication of
micro-electro-mechanical-systems devices: A. Natarajan,
Veera P. R Dandu, S. Hegde, and S.V. Babu, J. Electrochem. Soc. 156, H487 (2009) 145. Chemical Mechanical Polishing
of Methyl Silsesquioxane (MSQ): V.Meled,
S.V. Babu, and E. Matijevic,
J. Electrochem. Soc. 156, H460 (2009) 146. Selective Chemical Mechanical
Polishing of Silicon Dioxide over Silicon Nitride for Shallow Trench
Isolation: Dandu Veera P.
R, Shivaji Peddeti and S.
V. Babu: J. Electrochem.
Soc. 156, H936 (2009) 147. High silicon nitride and low
silicon dioxide removal rates using ceria abrasive-based dispersions: P.R. Veera Dandu, V.K. Devarapalli and S. V. Babu. J.
Colloid and Interface Sci. 347, 267 (2010) 148. Utility of Oxyanions for Selective Low-Pressure Polishing of Cu and
Ta in Chemical Mechanical Planarization; Charan Surisetty, B.C. Peethala, D.
Roy and S.V. Babu, Electrochem.
& Solid State Lett. 13 H244 (2010) 149. Novel Phosphate
Functionalized Silica-based Dispersions for Selectively Polishing Silicon
Nitride over Silicon Dioxide and Polysilicon films:
Veera P Dandu, Naresh K Penta, B.C. Peethala and S. V. Babu, J.
Colloid and Interface. Sci. 348, 114 (2010) 150. Chemical Mechanical
Planarization of TaN Wafers using Oxalic and
Tartaric Acid Based Slurries: S. V. S. B. Janjam,
B. C. Peethala, D. Roy and S. V. Babu, Electrochem. & Solid
State Lett. 13, H1 (2010) 151. Role of Different Additives
on Silicon dioxide Film Removal Rate During Chemical Mechanical Polishing
Using Ceria-based Dispersions: P. R. Veera Dandu, B. C. Peethala and S. V.
Babu, J. Electrochem.
Soc. 157, H869
(2010) 152. Role of Amines and Amino
Acids in Enhancing the Removal Rates of Undoped and
P-doped Polysilicon Films during
Chemical Mechanical Polishing: Veera P Dandu, Naresh Penta and S.V. Babu: Colloids
and Surfaces A: Physicochem. Eng. Aspects 366,
68 (2010) 153. Novel
α-Amine-Functionalized Silica-Based Dispersions For Selectively
Polishing Polysilicon and Si(100)
Over Silicon Dioxide, Silicon Nitride or Copper During Chemical Mechanical
Polishing: Veera P Dandu,
Naresh K Penta and S.V. Babu, Colloids and Surfaces A: Physicochem.
Eng. Aspects (in press) 154. Electrochemical
investigation of surface reactions for chemically promoted chemical
mechanical polishing of TaN in tartaric acid solutions: S. V. S. B. Janjam,
B. C. Peethala, J. P. Zheng, S. V. Babu, and D. Roy, Materials Chem. And
Phys. (in press) BOOKS (Proceedings Volumes) EDITED Chemical-Mechanical Planarization:
2002 MRS meeting Proceedings, Vol. 732E (electronic- only publication), S.V. Babu, R.Singh, N. Hayasaka, and M. Oliver (eds.) Chemical-Mechanical Polishing 2001
– Advances and Future Challenges: 2001 MRS Meeting Proceedings, Vol 671, S.V. Babu, K.C. Cadien and H. Yano (eds.) Chemical-Mechanical Polishing –
Fundamentals and Challenges: 1999 MRS Meeting proceedings, Vol. 566, S.V. Babu, S. Danyluk, M. Krishnan,
and M. Tsujimura (eds.) OTHER PUBLICATIONS 1. Study of energy transfer
mechanisms in CO 2 C 2H 6 and CO 2-SO 2 mixtures: I.V. Rao, M. Tyaga Raju, Y.V.C. Rao, S.V. Babu and V. Subba Rao, Modern developments in shock tube research,
504 (1975). 2. Fast reactions in shock waves -
A review: S V. Babu and V. Subba
Rao, Proceedings of the Symposium on Fast
Reactions, Thumba, India, K. Narayana
Rao and J. P. Mittal,
(Eds.), (1977). 3. Relaxation in SO 2 and SO 2+
rare gas mixtures: V.V.N. Kishore, S.V. Babu and V. Subba Rao, Proceedings of the Symposium on Fast Reactions,
Thumba, India, K. Narayana
Rao and J. P. Mittal,
(Eds.), (1977). 4. Collisional
energy transfer in CO 2-polyatomic molecule mixtures: P.R.M. Rao, S.V. Babu, Y.V.C. Rao and V. Subba Rao, Proceedings of the Symposium on Fast Reac tions, Thumba, India, K. Narayana Rao and J.P. Mittal, (Eds.),
(1977). 5. Relaxation and dissociation in
some polyatomic molecules: M. Tyagaraju, S.V. Babu, Y.V.C. Rao and V. Subba Rao, in Shock Tubes and
Waves, C.E. Treanor and J. Hall, (Eds.), State
University New York Press, Albany, p. 570 (1982). 6. m-6-8 potential and
thermodynamic properties of CO 2: R. Mohan and S.V. Babu,
p 509, in Chem. Engg. Thermodynamics, S.J. Newmann, (Ed.), Ann Arbor Science (1982). 7. A simple model for etching
III-V materials in a CCl 4
plasma: S.V. Babu and P.C. Sukanek,
p. 633 Proceedings of the Sixth International Symposium on Plasma
Chemistry, Montreal (1983). 8. Prediction of ternary
liquid-liquid equilibrium in type 3 systems using Van Laar
and UNIQUAC models: M.S. Sivasubramanian, T. Chakravarty and S.V. Babu, p.
528 Proceedings of 34th Canadian Chemical Engineering Conference,
Quebec, Oct. 1984. 9. Epoxy etch
rate and activation energy in CF 4/O 2 plasma: N.H. Lu, S.V. Babu, J.F. Rembetski, C. Nilsen and J.A. Welsh, Proceedings of the Fifth
Symposium on Plasma Processing, The Electrochemical Society, 1985, pp.
175 183. 10. Kinetic modeling of polymer
etching in CF 4/O 2 plasmas: J.F. Rembetski, S.V. Babu, N.H. Lu and J.G. Hoffarth,
Proceedings of the Fifth Symposium on Plasma Processing, The
Electrochemical Society, 1985, pp. 184 192. 11. Optical density and contrast
of positive photoresists: S.V. Babu
and V. Srinivasan, in Advances in Resist
Technology and Processing II, SPIE, 539, 1985, p.36. 12. The role of surface
fluorination in polymer etching by CF 4/O 2 plasmas: S.V. Babu,
L.A. Tiemann and R.E. Partch,
P1025, Proceedings of the 7th International Symposium on Plasma Chemistry,
Eindhoven, 1985. 13. Prediction
of etch rate of polymers in CF 4/O 2 and O 2 plasmas: V. Srinivasan, M.S. Sivasubramanian
and S.V. Babu, P1405, Proceedings of the 7th
International Symposium on Plasma Chemistry, Eindhoven, 1985. 14. Transient behavior of plasma
reactors: S.V. Babu, J.F. Rembetski,
W.A. Mlynko and J.G. Hoffarth,
P1100, Proceedings of the 7th International Symposium on Plasma Chemistry,
Eindhoven, 1985. 15. Modeling the dependence of
contrast and linewidth on processing variables: V. Srinivasan and S.V. Babu, in Advances
in Resist Technology and Processing III, SPIE, 631, 268, 1986 (C.
Grant Willson, Ed.) Research in processing of
electronic materials: S.V. Babu and P.C. Sukanek, in Chem. Engg.
Education, Fall 1986, 20, 186. 17. 193 nm laser assisted etching
of polysilicon: M.D. Armacost,
S.V. Babu, S.V. Nguyen and J.F. Rembetski,
in Science and Technology of Microfabrication,
R.E. Howard, E.L. Hu, S. Namba
and S. Pang, (Eds.), Materials Research Society, Pittsburgh, PA, 1987, 76,
147. 18. Excimer
laser applications: polymer etching and deposition: M. Ritz, S.V. Babu, V. Srinivasan and R.C.
Patel, in Photon, Beam and Plasma Simulated Processes at Surfaces,
V.M. Donnelly, I.P. Herman and M. Hirose (Editors), Materials Research
Society, Pittsburgh, 75, 433 (1987). 19. Adhesion and crosslink
gradient in a photoresist: R.L. Geary, S.V. Babu and J. Stephanie, in Surface and Colloid Science in
Computer Technology, K.L. Mittal (editor), Plenum
Press, p199 (1987). 20. Dopant
diffusion in semiconductors: S.V. Babu, in Chemical
Engineering Education in a Changing Environment, S. M. Sandler (Ed.), Engg. Res. Foundation, NY (1988). 21. Etching and surface
modification of polymers in CF 4/O 2 discharges: P. Scott, S.V. Babu, R.E. Partch and L.J. Matienzo, in Electronic Packaging Materials Science,
R. Jaccodine and R. C. Sundahl,
(Eds.), Materials Research Society, Pittsburgh, PA, 1988, 108, 207
(1988). 22. Calculation of developed
resist profiles by least action principle: E. Barouch,
B. Bradie and S.V. Babu,
in KTI Microelectronics Symposium, Interface '88, p.
187 196. 23. Three dimensional profile
simulation for positive photoresists: E. Barouch, B. Bradie, and S.V. Babu, in Advances in Resist Technology and Processing
VI, SPIE, 1086, 495 501. 24. Submicron resist profile
simulation in three dimensions on reflective substrates: E. Barouch, B. Bradie, H. Fowler
and S.V. Babu, in KTI Microelectronics Symposium,
Interface '89, 123 136 25. Plasma deposition and etching
of diamondlike carbon films: J. Seth, R. Padiyath, and S.V. Babu, in Applications
of diamond films and related materials, Y. Tzeng,
M. Yoshikawa, M. Murakawa, and A. Feldman, (Eds.),
Elsevier, 851-856 (1991). 26. RF plasma-induced deposition
of copper films on polymer surfaces: R. Padiyath,
M. David, and S.V. Babu, Metallized
Plastics 2, K. Mittal (Ed.), p113, Plenum
Press, NY, 1991. 27. Plasma-induced deposition of
copper films: R. Padiyath, J. Seth, S.V. Babu, and L.J. Matienzo, Metallized Plastics 3, K. Mittal (Ed.), Plenum, NY, p19, 1992. 28. Amorphous hydrogenated carbon
films: Deposition and characterization: J. Seth, R. Padiyath,
and S.V. Babu, in Proceedings of the
International Conference on Beam Processing of Advanced Materials, J.
Singh and S.M. Copley (Eds.), Chicago, TMS, p435, (1993). 29. Excimer
laser-ablative deposition of cBN films: G.C. D'Couto and S.V. Babu, in Proceedings
of the International Conference on Beam Processing of Advanced Materials, J.
Singh and S.M. Copley (Eds.), Chicago, TMS, p357, (1993). 30. A comparative study of the photoablation of polyimide-doped poly(tetrafluoroethylene) at 308 nm and 248 nm: G.C. D'Couto, S.V. Babu, F.D. Egitto, and C.R. Davis: Proceedings of the MRS Fall 92
Symposium on Laser Ablation, MRS, Pittsburgh, 285, 157 (1993). 31. Synthesis of silicon nitride
powders in pulsed rf plasmas: R.J. Buss, S.V. Babu and P. Ho, Proc. of the 9th Annual conf. on
Fossil Energy Materials, Oak Ridge, May 1995. 32. Chemical-mechanical polishing
of copper in acidic media: Q. Luo, D.R. Campbell
and S.V. Babu, Proc. 1st Int’l. Conf. on CMP for
VLSI/ULSI multilevel interconnection, p145, Santa Clara, Feb. 1996. 33. Pad degradation and
conditioning studies for CMP of interlayer dielectric films: K. Achuthan, J. Curry, B. Sennet,
M. Lacy, D. Campbell, and S.V. Babu, Proc. of the
1 st Int’l. Conf. on CMP for VLSI/ULSI multilevel
interconnection, p32, Santa Clara, 2/96. 34. Chemical-mechanical polishing
of copper: A Comparative analysis: Q. Luo, M. Fury,
and S.V. Babu, Proc.2nd Int’l. Conf. on CMP for
ULSI multilevel interconnection, p83, Santa Clara, Feb. 1997. 35. Mechanism of copper removal
during chemical-mechanical polishing in alkaline media: Q. Luo and S.V. Babu, Proc.14th
Int’l. Conf. on VLSI multilevel interconnection, p287, Santa Clara, June
1997. 36. Some fundamental and
technological aspects of chemical mechanical polishing of copper films: S.V. Babu, R.A. Mackay, R.S. Subramanian, and A.A. Busnaina, Proc. 3rd Int’l. Conf. on CMP for ULSI
multilevel interconnection, p385, Santa Clara, Feb. 1998 (Invited Paper).
37. Investigation of Cu and Ta
polishing using hydrogen peroxide, glycine, and a
catalyst: S.V. Babu, Y. Li, M. Hariharaputhiran,
S. Ramarajan, J. Zhang, Y.S. Her, and J.F.
Prendergast, Proc.15th Int’l. Conf. on VLSI multilevel interconnection,
p437, Santa Clara, June 1998. 38. Electrochemical behavior of
metal-doped diamondlike carbon films in aqueous
solutions: M. Sunkara, M. Wadsborn,
E. Yeap, V. Ralchenko,
B.N. Pypkin, M.L. Shubekin
and S.V. Babu, Proc. Electrochem.
Soc. Symp., Paris, 32, 324 (1998). 39. Resistance of a-C:H and a-C:H,F films to anodic dissolution in aqueous
electrolytes: C. Srividya, M. Sunkara,
and S.V. Babu, Proc. Electrochem.
Soc. Symp., Paris, 32, 324 (1998). 40. Copper dissolution and
chemical-mechanical polishing in acidic media, Q. Luo,
D.R. Campbell, Proc. Electrochem.
Soc. Symp., Paris, 32, 73 (1998). 41. Excimer
laser-induced ablation of doped poly(tetrafluoroethylene):
C.R. Davis, F.D. Egitto, and S.V. Babu, in Fluoropolymers,
G. Houghan et al (eds.), Plenum Publishing, 1999. 42. The role of alumina particle
hardness/elastic modulus in chemical-mechanical polishing of Cu, Ta, and W:
S. Ramarajan, M. Hariharaputhiran,
and S.V. Babu, Proc. 4th Int’l. Conf. on CMP for
ULSI multilevel interconnection, p430, Santa Clara, Feb. 1999. 43. The influence of pH and
temperature on polish rates and selectivity of silicon dioxide and nitride
films: W. G. America, R. Srinivasan and S.V. Babu, in Chemical-Mechanical polishing: Fundamentals
and challenges, Materials Research Society, p13, 566, 1999.
44. Role
of film hardness on the polish rates of metal thin films: S. Ramarajan, Y. Li, M. Hariharputhiran,
Y.S. Her, and S.V. Babu,
in Chemical-Mechanical polishing: Fundamentals and challenges, Materials
Research Society, p123, 566, 1999. 45. Mechanism of copper removal
during CMP in H 2O 2-Glycine based slurries: M. Hariharaputhiran,
S. Ramarajan, Y. Li, and S.V. Babu
in Chemical-Mechanical polishing: Fundamentals and challenges, Materials
Research Society, p129, 566, 1999. 46. Modified Preston equation –
revisited: S. Ramarajan and S.V. Babu in Chemical-Mechanical polishing: Fundamentals
and challenges, Materials Research Society, p149, 566, 1999 47. Role of Chemicals and abrasive
particle properties in chemical-mechanical polishing of Cu and Ta: Y. Li, A. Jindal, and S.V. Babu in Copper
Interconnects, New contact metallurgies, and Low-k Interlevel
Dielectrics (G.S. Mathad and H.S Rathore, eds), ECS Symposium
Proceedings, p32, PV2000-27, 2000 48. Slurry Retention and transport
during chemical-mechanical polishing of Copper: A. Jindal,
S. Narayanan and S. V. Babu, in Chemical-Mechanical
Polishing 2001 – Advances and Future Challenges, Materials Research
Society, M4.10, 671, 2001 49. Effect of pH on
Chemical-Mechanical Polishing of Copper and Tantalum: A. Jindal,
Y. Li, and S. V. Babu, in Chemical-Mechanical
Polishing 2001 – Advances and Future Challenges, Materials Research
Society, M6.8, 671, 2001 50. Chemical mechanical
planarization of Cu and Ta: Some recent developments: Y. Li, and S.V. Babu, Semiconductor FabTech,
259, 13, 2001 51. Evaluation of alumina/silica
mixed abrasive slurries for chemical-mechanical polishing of copper and
tantalum: A. Jindal, S. Hegde,
and S.V. Babu, Proceedings of the 18 th Int’l VLSI multilevel interconnection conf. , p297,
2001 52. Mixed abrasive slurry: a study
of metal CMP: A. Jindal, S. Hegde
and S.V. Babu; Semiconductor FabTech
, 16 , 239, 2002 53. Pattern Density Effects in
Fixed Abrasive Polishing: R. Venigalla, L. Economikos, and S.V. Babu, in Chemical-Mechanical
Planarization 2002 , Materials Research Society, I2.2.1, 732E ,
2002 54. Mixed Abrasive CMP: A Study on
Metal and Dielectric Films: A. Jindal, S. Hegde, and S.V. Babu, in Chemical-Mechanical
Planarization 2002 , Materials Research Society, I3.6.1, 732E ,
2002 55. Evaluation of Monodispersed Silica Particles and Ceria Coated Silica
Particles for Chemical Mechanical Polishing: Z. Lu, S-H. Lee, E. Matijevic, and S.V. Babu, in Chemical-Mechanical
Planarization 2002 , Materials Research Society, I3.7.1, 732E ,
2002 56. Study of Slurry Composition
Transition in a Rotary Copper CMP Process: S. Hedge, U.B. Patri,
A. Jindal, and S.V. Babu,
in Chemical-Mechanical Planarization 2003 , Materials Research
Society, F1.5.1, 767 , 2003 57. The Effects of Particle Adhesion
in Chemical Mechanical Polishing: Z. Lu, S.V. Babu,
and E. Matijevic, in Chemical-Mechanical
Planarization 2003 , Materials Research Society, F3.5.1, 767 ,
2003 58. Electrochemical Studies of
Copper Chemical Mechanical Polishing Mechanism: Effects of Oxidizer
Concentration: J. Lu, J.E. Garland, C.M. Petite, S.V. Babu,
and D. Roy, in Chemical-Mechanical Planarization 2003 , Materials
Research Society, F6.4.1, 767 , 2003 59. Comparison of Glycine and Citric Acid as Complexing
Agents in Copper Chemical-Mechanical Polishing Slurries:V.
R. Gorantla and S. V. Babu,
in Chemical-Mechanical Planarization 2003, Materials Research Society,
F6.7.1, Vol. 767, (2003). 60. Effect of surface charges on
silicon dioxide and nitride planarization using alumina/ceria mixed abrasive
slurries: S. Hegde and S.V. Babu,
20 th VMIC conf. Proceedings , p519, 2003. 61. Planarization of metal and
dielectric films: new approaches: S. Hegde and S.
V. Babu, in Semicon,
Japan, Tokyo 2003 62. Chemical-mechanical
planarization of metal and dielectric thin films: V.R. Gortantla
and S.V. Babu, in Role of Chemical Engineering in
Processing of Minerals and Materials, J.N. Mohanty
et al (Eds.), Chemcon-2003, Bhubaneswar, India 63. General Principle of
Planarization Governing CMP, ECP, ECMP & CE - Low down force
planarization technologies: M. Tsujimura, I. Noji, A. Fukunaga, S.V. Babu, Proceedings of VLSI Multilevel Interconnection
Conference, Tampa, FL, September 2004. 64. The use of methylsilsequioxane
interlevel dielectric films in multilevel
metallization: Vinay Meled,
Sachin Pandija, Egon Matijevi and S.V. Babu, Pac-Rim CMP 2005, Jin-Goo Park et al (Eds), Seoul, Korea, p3 65. Effect of Slurry Chemistries
on Planarization Efficiency and Removal during Copper CMP: Youngki Hong, V.K. Devarapalli,
S. Pandija and S.V. Babu,
Pac-Rim CMP 2005, Jin-Goo Park et al (Eds),
Seoul, Korea, 2005, p203 66. Novel slurries for achieving a
low silicon dioxide and high silicon nitride removal during
chemical-mechanical planarization: A. Natarajan, Dandu Veera P R, and S.V. Babu, International conf. on planarization tech., Proceedings
of Int’l conf. on Planarization Tech. 2007, Dresden, VDE VERLAG GMBH, p123
67. Effects of ceria size and
concentration in Shallow trench isolation chemical mechanical planarization: S.Pandija, S.V. Babu, G. Criniere and C. Cientrey, Proceedings
ofInt’l conf. on Planarization Tech. 2007,
Dresden, VDE VERLAG GMBH, p257 68. A single dispersion for Cu and
barrier layers: S.V.S.B. Janjam, V.V.S.C Surisetty, S, Pandija, D. Roy and
S.V. Babu, Semiconductor Technology (ISTC 2008),
Shanghai, p 561 69. Single dispersion to polish
bulk and residual Copper along with barrier layers: S. V. S. B. Janjam, V. Kamavaram, D. Roy
and S. V. Babu, Proceedings of Int'l Conf. on
Planarization Technology, Taipei, 2008 70. Novel Ceria slurries for
achieving high silicon nitride and low silicon dioxide polishing rates: Dandu Veera P. R, Devarapalli Vamsi, S. V. Babu, Guillaume Criniere and
Claude Ceintrey: Proceedings of Int'l Conf. on
Planarization Technology, Taipei, 2008 |
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