S.V. Babu
Distinguished University Professor and Director, CAMP

305 CAMP
Clarkson University
PO Box 5665
Potsdam, NY 13699-5665

Phone: 315-268-2336
E-mail: babu@clarkson.edu 

Clarkson University » CAMP - A NY State CAT » Faculty & Staff » S. V. Babu

 

PUBLICATIONS IN JOURNALS

1. Quantum corrections to the second virial coefficient of a Stockmayer gas: M. McCarty Jr., and S.V. Babu, J. Phys. Chem., 74, 1113 (1970).

2. On moment conserving decoupling approximations for one electron propagators: S.V. Babu and M. Ratner, J. Chem. Phys., 57, 3156 (1972).

3. Quasiparticle interaction in liquid 3He: S.V. Babu and G. E. Brown, Ann. Phys., 78, 1 (1973).

4. Nuclear spin lattice relaxation in CH 4 inert gas mixtures: S. Rajan, K. Lalita and S.V. Babu, J. Mag. Reson., 16, 115 (1974).

5. Vibrational deactivation of CO 2( n 3 ) by ethane: I.V. Rao, Y.V.C. Rao, S.V. Babu and V. Subba Rao, Chem. Phys. Lett., 28, 501 (1974).

6. Intermolecular potentials and NMR data: I. CH 4 CO 2 and CH 4 N 2: S. Rajan, K. Lalita and S.V. Babu, Can. J. Phys., 53, 1624 (1975).

7. Intermolecular potentials and NMR data: II. CH 4, CF 4 and SiF 4: S. Rajan, K. Lalita and S.V. Babu, Can. J. Phys., 53, 1631 (1975).

8. Resonance energy exchange effects in atmospheric transmission due to pollutants: S.V. Babu, Y.V.C. Rao and V. Subba Rao, Chem. Phys. Lett., 37, 253 (1976).

9. Determination of composition of a gas mixture and the study of reactions using laser induced fluorescence: S.V. Babu and Y.V.C. Rao, Chem. Phys. Lett., 37, 249 (1976).

10. Collisional transfer of energy in CO 2 ethylene oxide mixtures: P.R.M. Rao, Y.V.C. Rao, S.V. Babu and V. Subba Rao, Indian J. Phys., 50, 259 (1976).

11. CO chemical laser: G.S. Kishore, K.M.S. Prasad, S.V. Babu and V. Subba Rao, Ind. J. Pure and Appl. Phys., 15, 855 (1977).

12. V-V energy transfer studies in CO 2 hydrocarbon mixtures: I.V. Rao, S.V. Babu, Y.V.C. Rao, V. Subba Rao and K. Lalita, J. Chem. Phys., 68, 2933 (1978).

13. Steady state dissociation of shock heated HCl, HF and CO: M. Ramakrishna and S.V. Babu, J. Chem. Phys., 68, 163 (1978).

14. Diatomic dissociation: Effects of weak bias and anharmonicity: M. Ramakrishna and S.V. Babu, Chem. Phys. Lett., 57, 557 (1978).

15. Dissociation rates of shock heated CO and HCL diluted with Ar: M. Ramakrishna and S.V. Babu, Chem. Phys., 36, 259 (1979).

16. Is rotational energy responsible for weak bias in diatomic dissociation? M. Ramakrishna and S.V. Babu, Chem. Phys., 42, 325 (1979).

17. Kinetics of step polymerization with unequal reactivities: K.S. Gandhi and S.V. Babu, AIChE J., 25, 266 (1979).

18. Step polymerization with unequal reactivities of functional groups: K.S. Gandhi and S.V. Babu, Macromolecules, 13, 791 (1980).

19. Measurement of relaxation rates in pure SO 2 and SO 2 Ar mixtures behind incident shock waves: V.V.N. Kishore, S.V. Babu and V. Subba Rao, Chem. Phys., 46, 297 (1980).

20. Dissociation rate measurements in SO 2+Ar mixtures behind incident shock waves: M. Tyagaraju, S.V. Babu and V. Subba Rao, Chem. Phys., 48, 411 (1980).

21. Deactivation of CO 2( n 3 ) by some polyatomic molecules: P.R.M. Rao, Y.V.C. Rao, S.V. Babu and V. Subba Rao, Chem. Phys. Let., 71, 485 (1980).

22. V V energy transfer studies in CO 2( n 3 ) – alcohols: P.R.M. Rao, S.V. Babu, V.S. Rao and Y.V.C. Rao, Chem. Phys., 55, 215 (1981).

23. Feasibility study of a large scale power generation system based on “Concentration Difference Energy”: D.P. Rao, S.V. Babu and V.S. Rao, Solar Energy, 27, 313 (1981).

24. A computationally simple model for multiphoton induced chemical processes: R.J. McCluskey and S.V. Babu, J. Phys. Chem., 86, 3210 (1982).

25. Homogeneous nucleation kinetics: D.H. Rasmussen, M.R. Appleby, G.L. Leedom, S.V. Babu and R.J. Naumann, J. Crystal Growth, 64, 229 (1983).

26. A corresponding states correlation for nucleation from the vapor: D.H. Rasmussen and S.V. Babu, Chem. Phys. Lett., 108, 449 (1984).

27. Cross linking photoresists – effect of frequency of radiation on uniformity of cross linking and contrast: V. Srinivasan and S.V. Babu, Photographic Sci. and Engg., 28, 175 (1984).

28. Thermal degradation of polyisobutylene – effect of sample size on weight loss: V. Srinivasan and S.V. Babu, Polymer J., 17, 525 (1985).

29. Representation and calculation of three liquid phase equilibria of two ternary systems: T. Chakravarty, M.S. Sivasubramanian and S.V. Babu, Fluid Phase Equilibria, 19, 221, (1985).

30. A simple model for predicting contrast of photoresists: S.V. Babu and V. Srinivasan, IEEE Trans. Electron Dev., ED 32, 1896 (1985).

31. Effect of sample size and environment on thermal degradation of polymers: V. Srinivasan and S.V. Babu, Polymer Degradation and Stability, 13, 77 (1985).

32. Characterization of positive photoresist performance: S.V. Babu and V. Srinivasan, J. Imaging Tech., 11, 168 (1985) (Invited Paper).

33. Equation of state calculations for CO 2, C 2H 4 and N 2 using perturbation theory: Effect of damping the quadrupole quadrupole and induced quadrupole series at small inter­molecular separa­tions: R. Mohan, D.P. Rao and S.V. Babu, Fluid Phase Equilibria, 25, 171(1986).

34. Exact solution of Dill’s model equations for positive photoresist kinetics: S.V. Babu and E. Barouch, IEEE Electron Dev. Lett., EDL 7, 252 (1986).

35. Exact solution for the kinetics of the image reversal process: S.V. Babu, IEEE Electron Dev. Lett., EDL 7, 250 (1986).

36. Excimer laser etching of polymers: V. Srinivasan, M.A. Smrtic and S.V. Babu, J. Appl. Phys., 59, 3861 (1986).

37. Effect of process parameters on the contrast of positive photoresists: V. Srinivasan and S.V. Babu, J. Electrochem. Soc., 133, 1686 (1986).

38. Exact solution for the optical absorbance of thin films: S.V. Babu and E. Barouch, Studies in Appl. Math., 77, 173 (1987).

39. Exposure bleaching of nonlinear resist materials: Exact solution: S.V. Babu and E. Barouch, IEEE Electron Dev. Lett., EDL-8, 401 (1987).

40. 193 nm excimer laser assisted etching of polysilicon: M.D. Armacost, S.V. Babu, S.V. Nguyen and J.F. Rembetski, J. Mater. Res., 2, 895 (1987).

41. Calculation of image profiles for contrast enhanced lithogra­phy: S.V. Babu, E. Barouch and B. Bradie, J. Vac. Sci. and Tech., B6, 564 (1988).

42. Standing waves in optical positive photoresist films: S.V. Babu and E. Barouch, J. Opt. Soc. America, 5, 1460 (1988).

43. Resist development described by least action principle: E. Barouch, B. Bradie and S.V. Babu, J. Vac. Sci. and Tech., B6, 2234 (1988).

44. Optical Microlithography: Some analytic results: S.V. Babu and E. Barouch, J. Imaging Sci., 33, 193 200 (1989).

45. A three dimensional profile modeling algorithm for positive photoresists: E. Barouch, B. Bradie and S.V. Babu, J. Vac. Sci. and Tech., B7, 1766 1770 (1989).

46. Simulation of three dimensional positive photoresist images: E. Barouch, B. Bradie and S.V. Babu, Jap. J. Appl. Phys., 28, 2624 (1989).

47. Kinetic aspects of plasma etching of polyimide in CF 4/O 2 discharges: P.M. Scott, S.V. Babu, R.E. Partch, and L.J. Matienzo, Polymer Degradation and Stability, 27, 169 (1990).

48. CF 4/O 2 plasma etching and surface modification of polyimide films: Time dependent surface fluorination and fluorination model: P.M. Scott, L.J. Matienzo and S.V. Babu, J. Vac. Sci. and Technol., A8, 2382 (1990).

49. Plasma enhanced deposition of AlN fine powder and films: M. David, S.V. Babu and D.H. Rasmussen, AIChE J., 36, 871 (1990).

50. Ultraviolet reflectance of DLC, AlN, and SiC thin films: M. David, S.V. Babu, M.I. Chaudhry, and B. Flint, Appl. Phys. Lett., 57, 1093 (1990).

51. A two step regression procedure for the optical characteriza­tion of thin films: S.V. Babu, M. David, and R.C. Patel, Appl. Optics, 30, 839 (1991).

52. Excimer laser-induced deposition of copper films: S.V. Babu, R. Padiyath, M. David, and L. Walsh, AIChE J., 37, 150 (1991).

53. RIE of Monocrystalline, Polycrystalline, and Amorphous SiC in CF 4/O 2 Mixtures: R. Padiyath, R.L. Wright, M.I.Chaudhry, and S.V. Babu, Appl.Phys. Lett., 58,1053 (1991).

54. Plasma deposition and etching of diamondlike carbon films: M. David, R. Padiyath, and S.V. Babu, AIChE J., 37, 367 (1991).

55. Observation of the internal morphology of polystyrenic materials using oxygen plasma etching: N.S. Ramesh, R. Padiyath, G.A. Campbell, and S.V. Babu, J. Polym. Sci., Part B, Polym. Phys., 29, 1031 (1991).

56. Laser-induced deposition of Cu and Pb powders: D. Narasimharao, S.V. Babu and D.H. Rasmussen, J. Materials Res., 7, 1104 (1992).

57. Effect of diluents added during deposition on the etching characteristics of diamondlike carbon films: J. Seth, R. Padiyath, S.V. Babu, and M. David, Thin Solid Films, 212, 251 (1992).

58. Influence of the deposition gas mixture on the structure and failure modes of diamondlike carbon films: J. Seth, R. Padiyath, and S.V. Babu, J. Vac. Sci. and Technol., A10, 284 (1992).

59. Electrical characteristics of plasma deposited diamondlike carbon/silicon metal-insulator- semiconductor structures: J. Seth, M.I. Chaudhry, and S.V. Babu, J. Vac. Sci. and Technol. A10, 3125 (1992).

60. Enhancement of sp 3/sp 2 ratio in plasma deposited amorphous hydrogenated carbon films by the addition of ammonia: J. Seth, A.J. Ward, and S.V. Babu, Appl. Phys. Lett., 60, 1957 (1992).

61. Excimer laser induced ablation of poly(etheretherketone), polyimide, and poly(tetrafluoro­ ethylene): S.V. Babu, G.C. D’Couto, and F.D. Egitto, J. Appl. Phys., 72, 792 (1992).

62. Effects of inert gas dilution of 1,3 Butadiene on the characteristics of plasma deposited a:C-H films: J. Seth and S.V. Babu, J. Appl. Phys. 73, 2496 (1993).

63. Deposition of copper films on silicon substrates by plasma-induced reduction of copper formate: film purity and silicide formation: R. Padiyath, J. Seth, S.V. Babu, and L.J. Matienzo, J. Appl. Phys. 73, 2326 (1993).

64. The use of thin film thermocouples to determine the thermal conductivity and the Young’s modulus of coatings and interfaces: S. Krishnan, S.V. Babu, R. Bowen, L.P. DeMejo, H. Osterhoudt, and D.S. Rimai, J. Adhesion, 42, 103 (1993).

65. Comparison of laser and O 2 plasma etching of DLC films: V.G. Ralchenko, T.V. Kononenko, T. Foursova, E.N. Loubin, V.E. Strelnitsky, J. Seth, and S.V. Babu, Diamond and Related Mater., 2, 211 (1993).

66. Optical emission from the laser-induced plasma during KrF laser etching of diamondlike carbon films: J. Seth, R. Padiyath, and S.V. Babu, Appl. Phys. Lett., 63, 126 (1993).

67. Laser-plasma deposition of diamond phase at low temperatures: J. Seth, R. Padiyath, D.H. Rasmussen, and S.V. Babu, Appl. Phys. Lett., 63, 473 (1993).

68. Fluorohydrogenated amorphous carbon (a-C:H,F) films prepared by the rf plasma decomposition of 1,3 butadiene and carbon tetrafluoride: J. Seth and S.V. Babu, Thin Solid Films, 230, 90 (1993).

69. Laser-induced ablation of polyimide-doped poly(tetrafluoroethylene) at 248 nm and 308 nm: G.C D’Couto, S.V. Babu, F.D. Egitto, and C.R. Davis, J. Appl. Phys., 74, 5972 (1993).

70. Incorporation of nitrogen in diamondlike carbon films: J. Seth, R. Padiyath, and S.V. Babu, Diamond and Related Materials, 3, 211 (1994).

71. Deposition of copper oxide films by reactive laser ablation of copper formate in an rf oxygen plasma ambient: R. Padiyath, J. Seth, and S.V. Babu, Thin Solid Films, 239, 8 (1994).

72. Structural-modification mechanism for polyimide-doped poly(tetrafluoroe­thylene) at sub-threshold fluences using 248 nm pulses: C.R. Davis, R.W. Snyder, F.D. Egitto, G.C. D’Couto and S.V. Babu, J. Appl. Phys., 76, 3049 (1994).

73. Heat transfer and material removal in pulsed UV laser-induced ablation of polymers: pulsewidth dependence: G.C. D’Couto and S.V. Babu, J. Appl. Phys., 76, 3052 (1994).

74. Lithographic application of diamondlike carbon films: J. Seth, S.V. Babu, V.G. Ralchenko, T.V. Kononenko, V.P. Ageev, and V.E. Strelnitsky, Thin Solid Films, 254, 92 (1995).

75. Excimer laser etching of diamond-like carbon films: Spalling effect: T.V. Kononenko, V.G. Ralchenko, E.D. Obraztsova, V.I. Konov, J. Seth, S.V. Babu, and E.N. Loubnin, Appl. Surf. Sci., 86, 234 (1995).

76. The effects of laser radiation at 248nm on the surface characteristics and joint properties of aluminum adherends: E. Sancaktar, S.V. Babu, E. Zheng, G.C. D’Couto, and H. Lipshitz, J. Adhesion, 50, 103 (1995).

77. Excimer laser-induced crystallization and doping of amorphous SiGe films: S. Krishnan, M.I. Chaudhry, and S.V. Babu, J. Materials Res., 10, 1884 (1995).

78. Excimer laser-induced doping of crystalline silicon carbide films: S. Krishnan, G.C. D’Couto. M.I. Chaudhry, and S.V. Babu, J. Materials Res., 10, 2723 (1995).

79. Synthesis of silicon nitride particles in pulsed rf plasmas: R.J. Buss and S.V. Babu, J. Vac. Sci. and Tech., B14, 577 (1996).

80. Stabilization of alumina slurry for chemical-mechanical polishing of copper: Q. Luo, D.R. Campbell and S.V. Babu, Langmuir, 12, 3563 (1996).

81. Corrosion resistance of diamondlike carbon film-coated aluminum films: C.V. Srividya and S.V. Babu, Chemistry of Materials, 8, 2528 (1996).

82. Investigation of pad deformation and conditioning during the chemical-mechanical polishing of silicon dioxide films: K. Achuthan, J. Curry, M. Lacy, D. Campbell, and S.V. Babu, J. Electronic Materials, 25, 1628 (1996).

83. A review of some properties and applications of diamondlike carbon films: C.V. Srividya and S.V. Babu, J. Energy, Heat and Mass Transfer, 19, 39 (1997).

Surface and bulk composition­al characterization of plasma-polymerized fluorocarbon films prepared from hexafluoroethane and acetylene or butadiene reactant gases: S.A. Visser, C.E. Hewitt, J. Fornalik, C. Braustein, C.V. Srividya, and S.V. Babu, J. Appl. Poly. Sci., 66, 409 (1997).

85. Composition and surface energies of plasma-deposited multilayer fluorocarbon thin films: S.A. Visser, C.V. Srividya, and S.V. Babu, Surface Coatings and Technology, 96, 210 (1997)

86. Resistance of plasma-deposited a-C:H/fluorocarbon films to anodic breakdown in aqueous electrolytes : C. Srividya, M. Sunkara and S.V. Babu, J. Materials Res., 12, 2099 (1997).

87. Corrosion protection ability of plasma-deposited a-C:H and fluorocarbon films: C. Srividya, M. Sunkara, and S.V. Babu, J. Materials Engg. And Performance, 6, 586(1997)

88. Chemical-mechanical polishing of copper in alkaline media: Q. Luo, D.R. Campbell and S.V. Babu, Thin Solid Films, 311, 177 (1997).

89. Copper dissolution in aqueous ammonia-containing media during chemical-mechanical polishing: Q. Luo, R. Mackay, and S.V. Babu, Chemistry of Materials, 9, 2101 (1997)

90. Surface and corrosion characteristics of a-C:H/fluorocarbon films: C. Srividya, S.V. Babu and S.A. Visser, J. Adhesion, 67, 81 (1998).

91. Modification of the Preston equation for the chemical-mechanical polishing of copper: Q. Luo, S. Ramarajan, and S.V. Babu, Thin Solid Films, 335, 160 (1998).

92. Development of a CD-ROM on thin film technologies: Design, Usability assessment and Challenges: S.V. Babu, I.I. Suni, D. Rasmussen, J. Engg. Education, 583, 1998 Supplement.

93. Anodic dissolution of diamondlike carbon film-coated type 301 stainless steel: C. Srividya, I. Moskowitz and S.V. Babu, J. Materials Res., 14, 2124 (1999)

94. Hardness of sub-micron abrasive particles and polish rate measurements: S. Ramarajan, M. Hariharaputhiran, Y.S. Her, and S.V. Babu, Surface Engineering, 15, 324 (1999)

95. Transport phenomena in chemical-mechanical polishing: R.S. Subramanian, L. Zhang, and S.V. Babu, J. Electrochem. Soc., 146, 4263 (1999)

96. Structure and electrochemical characteristics of metal doped diamondlike carbon films: P. Koduri, M. Sunkara, E.C. Dickey, C. Frazier, and S.V. Babu, Surface Engineering, 15, 373 (1999)

97. The role of alumina particle density in the chemical-mechanical polishing of copper, tantalum and tungsten disks and films: S. Ramarajan, M. Hariharaputhiran, Y.S. Her, and S.V. Babu, J. CMP for On-Chip Interconnection, 1, 28 (1999)

98. Chemical-mechanical polishing of Ta films: M. Hariharaputhiran, S. Ramarajan, Y.Li, and S.V. Babu, Electrochem. and Solid State Letters, 3, 95 (2000)

99. Hydroxyl radical formation in H 2O 2-aminoacid solutions and chemical-mechanical polishing of Cu: M. Hariharaputhiran, J. Zhang, Y. Li, and S.V. Babu, J. Electrochem. Soc., 147, 3820 (2000)

100. Effect of pH and ionic strength on chemical-mechanical polishing of Ta: S. Ramarajan, Y. Li, M. Hariharaputhiran, and S.V. Babu, Electrochem. and Solid State Letters, 3, 232 (2000)

101. Dishing effects during chemical-mechanical polishing of copper in acidic slurries: Q. Luo and S.V. Babu, J. Electrochem. Soc., 147, 4639 (2000)

102. Chemical-mechanical polishing of copper and tantalum films in potassium iodate-based slurries: Ying Li and S.V. Babu, Electrochem. and Solid State Letters, 4, G20 (2001)

103. Surface morphology and quality of a-Si:C:H: films: I. Moskovitz and S.V. Babu, Thin Solid Films, 385, 48 (2001)

104. Chemical-mechanical polishing of Cu and Ta films using silica abrasives: Y. Li, M. Hariharaputhiran, and S.V. Babu, J. Mater. Res., 16, 1066 (2001)

105. Chemical mechanical planarization of Cu and Ta: S.V. Babu, Y. Li, and A. Jindal, JOM, 53, 50, (2001)

106. Chemical-mechanical polishing using mixed abrasive slurries: A. Jindal, S. Hegde, and S.V. Babu, Electrochem. and Solid State Letters, 5, G48 (2002).

107. Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria: S-H Lee, Z. Lu, S.V. Babu, and E. Matijevic', J. Materials Res. 17, 2744 (2002)

108. Effect of pH and H2O2 on Ta CMP: Electrochemistry and XPS Studies: S. C. Kuiry, S. Seal, W. Fei, J. Ramsdell, V. Desai, S.V. Babu and Y. Li, J. Electrochem. Soc., 150, C36 (2003)

109. The effects of process variables on properties and composition of a-Si:C:H films: I. Moskowitz, W. Lanford, and S.V. Babu, J. Materials Res. 18, 129 (2003)

110. Mixed abrasive slurries for dielectric film polishing: A. Jindal, S. Hegde, and S.V. Babu, J. Electrochem. Soc., 150, G314 (2003)

111. The use of monodispersed colloids in the polishing of Copper and Tantalum: Z. Lu, S-H Lee, S.V. Babu, and E. Matijevic, J. Colloid and Interface Sci. 261, 55 (2003)

112. Pattern density dependence of polish rates in fixed abrasive polishing: V. Gorantla, R. Venigalla, L. Economicos, D. O’Connor, and S.V. Babu, J. Electrochem. Soc. 150, G821 (2003)

113. Mechanism and an empirical model of fixed abrasive polishing process on a web-format tool: R. Venigalla, L. Economicos, and S.V. Babu, J. Mater. Res. 18, 1659 (2003)

114. Removal of shallow and deep scratches and pits from copper wafers: S. Hegde and S.V. Babu, Electrochem. and Solid State Letters, 6, G126 (2003)

115. Effect of mixed abrasives in chemical mechanical polishing of oxide films: Z. Lu, S-H Lee, V.R. Gorantla, S.V. Babu, and E. Matijevic, J. Mater. Res. 18, 2323 (2003)

116. Chemical role of peroxide-based alkaline slurries in chemical-mechanical polishing of Ta: Investigation of surface reactions using time resolved impedance spectroscopy: K.A. Assiongbon, S.B. Emery, C.M. Pettit. S.V. Babu and D. Roy, Materials Chem. And Phys. 86, 347 (2004)

117. Relative Roles of H2O2 and Glycine in Chemical Mechanical Polishing of Copper Studied with Impedance Spectroscopy: J. Lu, J.E. Garland, C.M. Pettit, S.V. Babu, D. Roy, J. Electrochem. Soc., 151, G717 (2004)

118. Effect of pH on chemical-mechanical polishing of Cu and Ta: A. Jindal and S.V. Babu: J. Electrochem. Soc., 151, G709 (2004)

119. Slurry additive effects on the suppression of silicon nitride removal during chemical-mechanical polishing: W.G. America and S.V. Babu, Electrochem. and Solid State Lett., 7, G327 (2004)

120. Study of surface charge effects on oxide and nitride planrization using alumina/silica mixed abrasive slurries: S. Hegde and S.V. Babu, Electrochem. and Solid State Lett., 7, G317 (2004)

121. Chemical effects in chemical-mechanical planarization of TaN: Investigation of surface reactions in a peroxide-based alkaline slurry using Fourier transform impedance spectroscopy: V.R.K. Gorantla, S. B. Emery, S. Pandija, S.V. Babu, D. Roy, Materials Letters, 59, 690 (2005)

122. Amino acids as complexing agents during chemical mechanical planarization of Cu: V.R.K. Gorantla, E.Matijevic, and S.V. Babu, Chemistry of Materials, 17, 2076 (2005)

123. Oxalic acid as a complexing agent in copper planarization slurries: V.R.K.Gorantla, A. Babel. S, Pandija and S. V. Babu, Electrochem. And Solid State Lett. 8, G131 (2005)

124. Citric acid as a complexing agent in chemical-mechanical planarization of copper: Investigation of surface reactions using impedance spectroscopy: V. R. K. Gorantla, K. A. Assiongbon, S. V. Babu, and D. Roy, J. Electrochem. Soc., 152, G404 ( 2005)

125. Voltage initiated material removal for electrochemical mechanical planarization of copper in NO3-, glycine and H2O2 containing electrolytes: P.C. Goonetillake, S.V. Babu and D. Roy, Electrochem. And Solid State Lett. 8, G190 (2005)

126. Particle adhesion studies relevant to chemical mechanical polishing: Zhenyu Lu, Niels P. Ryde, S.V. Babu, and E. Matijevi, Langmuir 21, 9866 (2005)

127. Chemical-mechanical polishing of Copper using Molybdenum dioxide slurry: S. Hegde, U. Patri and S.V. Babu, J. Mater. Res. 20, 2553 (2005)

128. The role of amine and carboxyl functional groups of complexing agents in slurries for chemical mechanical polishing of copper: V.R. Gorantla, D. Goia, E. Matijevi, and S.V. Babu, J. Electrochem. Soc. 152, G912 (2005)

129. Ammonium dodecyl sulfate as a dissolution inhibitor surfactant for electrochemical mechanical planarization of copper: Y. Hong, D. Roy and S.V. Babu, Electrochem. & Solid State Lett., 8, G297 (2005)

130. Utility of dodecyl sulfate surfactants as dissolution inhibitors in chemical mechanical planarization of copper: Y. Hong, U.B. Patri, S. Ramakrishnan, D. Roy and S.V. Babu: J. Materials Res., 20, 3413 (2005)

131. Electrochemical impedance characteristics of Ta/Cu contact regions in polishing slurries used for planarization of Cu and Ta: K.A. Assiongbon, S.B. Emery, V.R.K.Gorantla, S.V. Babu and D. Roy, Corrosion Science, 48, 372 (2006)

132. Interaction between abrasive particles and films during chemical-mechanical polishing of copper and tantalum: Ying Li, Junzi Zhao, Ping Wu, Yong Lin, S.V. Babu and Yuzhuo Li Thin Solid Films, 497, 321-328 (2006)

133. Role of the functional groups of complexing agents in copper slurries: Udaya Patri, Serdar Aksu and S.V. Babu: J. Electrochem. Soc. G650 (2006)

134. Comparison of dicarboxylic acids as complexing agents for abrasive-free chemical mechanical planarization of copper: S. Ramakrishnan, S.B. Janjam, U.B. Patri, D. Roy, and S.V. Babu, Microelectronic Engineering 84, 80-86 (2007).

135. A model of pad – abrasive interactions in chemical mechanical polishing: E. Paul, J. Horn, Ying Li and S.V. Babu, Electrochem. & Solid State Lett. 10, H131 (2007)

136. Chemical-mechanical planarization of copper using abrasive free solutions of oxalic acid and hydrogen peroxide: S. Pandija, D. Roy and S.V. Babu, Materials Chem. And Phys. 102, 144 (2007)

137. Synergistic Roles of Dodecyl Sulfate and Benzotriazole in Enhancing the Efficiency of Chemical-Mechanical Planarization of Copper: Y. Hong, V. K. Devarapalli, D. Roy and S.V. Babu: J. Electrochemical Soc. 154, H444 (2007)

138. Colloidal aspects of chemical mechanical planarization: E. Matijevic' and S.V. Babu, J. Colloid and Surf. Sci. 320, 219 (2008)

139. Oxalic Acid Based Slurries with Tunable Selectivity for Copper and Tantalum Removal in CMP: S. B. Janjam, C. Surisetty, S. Pandija, D. Roy, S.V. Babu, Electrochem. & Solid State Lett., 11, H66 (2008)

140. Investigation of dissolution inhibitors for electrochemical mechanical planarization of copper using beta-alanine as a complexing agent: B. K. Klug, C. M. Pettit, S. Pandija, S. V. Babu, and D. Roy, J Applied Electrochemistry 38, 1347 (2008)

141. Dissolution Inhibition in Cu-CMP using Dodecyl-benzene-sulfonic Acid Surfactant with Oxalic Acid and Glycine as Complexing Agents: C. Surisetty, P. Goonetilleke , D. Roy and S.V. Babu, J. Electrochem. Soc. 155, H971 (2008)

142. Tartaric Acid as a Complexing Agent for Selective Removal of Tantalum and Copper during Planarization: S. B. Janjam, S. Peddeti, D. Roy and S.V. Babu, Electrochem. & Solid State Lett. 11, H327 (2008)

143. Achievement of high planarization efficiency in planarization of copper at a reduced down pressure: S. Pandija, D. Roy, S.V. Babu, Microelectronic Engg., 86, 367 (2009)

144. Selective Polishing of polysilicon during fabrication of micro-electro-mechanical-systems devices: A. Natarajan, Veera P. R Dandu, S. Hegde, and S.V. Babu, J. Electrochem. Soc. 156, H487 (2009)

145. Chemical Mechanical Polishing of Methyl Silsesquioxane (MSQ): V.Meled, S.V. Babu, and E. Matijevic, J. Electrochem. Soc. 156, H460 (2009)

146. Selective Chemical Mechanical Polishing of Silicon Dioxide over Silicon Nitride for Shallow Trench Isolation: Dandu Veera P. R, Shivaji Peddeti and S. V. Babu: J. Electrochem. Soc. 156, H936 (2009)

147. High silicon nitride and low silicon dioxide removal rates using ceria abrasive-based dispersions: P.R. Veera Dandu, V.K. Devarapalli and S. V. Babu. J. Colloid and Interface Sci. 347, 267 (2010)

148. Utility of Oxyanions for Selective Low-Pressure Polishing of Cu and Ta in Chemical Mechanical Planarization; Charan Surisetty, B.C. Peethala, D. Roy and S.V. Babu, Electrochem. & Solid State Lett. 13 H244 (2010)

149. Novel Phosphate Functionalized Silica-based Dispersions for Selectively Polishing Silicon Nitride over Silicon Dioxide and Polysilicon films: Veera P Dandu, Naresh K Penta, B.C. Peethala and S. V. Babu, J. Colloid and Interface. Sci. 348, 114 (2010)

150. Chemical Mechanical Planarization of TaN Wafers using Oxalic and Tartaric Acid Based Slurries: S. V. S. B. Janjam, B. C. Peethala, D. Roy and S. V. Babu, Electrochem. & Solid State Lett. 13, H1 (2010)

151. Role of Different Additives on Silicon dioxide Film Removal Rate During Chemical Mechanical Polishing Using Ceria-based Dispersions: P. R. Veera Dandu, B. C. Peethala and S. V. Babu, J. Electrochem. Soc. 157, H869 (2010)

 

152. Role of Amines and Amino Acids in Enhancing the Removal Rates of Undoped and P-doped Polysilicon Films during Chemical Mechanical Polishing: Veera P Dandu, Naresh Penta and S.V. Babu: Colloids and Surfaces A: Physicochem. Eng. Aspects 366, 68 (2010)

 

153. Novel alpha-Amine-Functionalized Silica-Based Dispersions For Selectively Polishing Polysilicon and Si(100) Over Silicon Dioxide, Silicon Nitride or Copper During Chemical Mechanical Polishing: Veera P Dandu, Naresh K Penta and S.V. Babu, Colloids and Surfaces A: Physicochem. Eng. Aspects 371, 131 (2010)

 

154. Electrochemical investigation of surface reactions for chemically promoted chemical mechanical polishing of TaN in tartaric acid solutions: S. V. S. B. Janjam, B. C. Peethala, J. P. Zheng, S. V. Babu, and D. Roy, Materials Chem. And Phys. 123, 521 (2010)

155. Complexing between additives and ceria abrasives used for polishing silicon dioxide and silicon nitride films: Liangyong Wang, Bo Liu, Zhitang Song, Weili Liu, Songlin Feng, David Huang, S.V Babu, Electrochem. & Solid State Lett., 14, H128 (2011)

156. Ruthenium polishing with silica abrasive-based slurries containing potassium periodate as the oxidizer B. C. Peethala and S. V. Babu. J. Electrochem. Soc., 158, H271 (2011)

157. Role of poly(diallyldimethylammonium chloride) in selective polishing of polysilicon over silicon dioxide and silicon nitride films: Naresh K. Penta, P. R. Dandu Veera , and S. V. Babu, Langmuir, 27, 3502 (2011)

 

158. Chemical Mechanical Polishing of Ge Using Colloidal Silica Particles and H2O2: S. Peddeti, P. Ong, L. H. A. Leunissen, and S. V. Babu, Electrochem. & Solid State Lett., 14, H254 (2011)


159. Silicon Nitride Film Removal during Chemical Mechanical Polishing Using Ceria-Based Dispersions: Veera P Dandu, Brown Peethala, Hariprasad Amanapu and S.V. Babu, J. Electrochem. Soc., 158, H763 (2011)


160. Controlling the galvanic corrosion of Cu during chemical mechanical planarization of Ru barrier films: B.C. Peethala, D. Roy, and S.V. Babu, Electrochem. & Solid State Lett., 14 H306-H310 (2011)


161. Electrochemical investigation of the roles of oxyanions in chemical mechanical planarization of Ta and TaN: C.M. Sulyma, C.M. Petit, C.V.V. Surisetty, S.V. Babu And D. Roy, J. Appl. Electrochem., 41, 561( 2011)


162. Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid Author(s): Liangyong Wang, Bo Liu, Zhitang Song, Weili Liu, Songlin Feng, David Huang, S.V Babu, Chinese Physics B, 20, March 2011

163. Chemical mechanical polishing of Ge in hydrogen peroxide based slurries: Role of ionic strength: J. B. Matovu, N.K. Penta, S. Peddeti and S.V. Babu, J. Electrochem. Soc., 158 H1152-H1160 (2011)


164. Role of Polycation Adsorption in Poly-Si, SiO2 and Si3N4 Removal During Chemical Mechanical Polishing: Effect of Polishing Pad Surface Chemistry: Naresh K. Penta, J.B. Matovu, P. R. Dandu, Sita Krishnan, and S. V. Babu, Colloids and Surfaces A 388, 21 (2011)


165. Charge density and pH effects on polycation adsorption on poly-Si, SiO2 and Si3N4 films and impact on chemical mechanical planarization: N.K. Penta, P.R. Dandu Veera and S.V. Babu ACS Appl. Mater. Interfaces 3, 4126-4132 (2011)

 

BOOKS (Proceedings Volumes) EDITED

Chemical-Mechanical Planarization: 2002 MRS meeting Proceedings, Vol. 732E (electronic- only publication), S.V. Babu, R.Singh, N. Hayasaka, and M. Oliver (eds.)

Chemical-Mechanical Polishing 2001 – Advances and Future Challenges: 2001 MRS Meeting Proceedings, Vol 671, S.V. Babu, K.C. Cadien and H. Yano (eds.)

Chemical-Mechanical Polishing – Fundamentals and Challenges: 1999 MRS Meeting proceedings, Vol. 566, S.V. Babu, S. Danyluk, M. Krishnan, and M. Tsujimura (eds.)

OTHER PUBLICATIONS

1. Study of energy transfer mechanisms in CO 2 C 2H 6 and CO 2-SO 2 mixtures: I.V. Rao, M. Tyaga Raju, Y.V.C. Rao, S.V. Babu and V. Subba Rao, Modern developments in shock tube research, 504 (1975).

2. Fast reactions in shock waves - A review: S V. Babu and V. Subba Rao, Proceedings of the Symposium on Fast Reactions, Thumba, India, K. Narayana Rao and J. P. Mittal, (Eds.), (1977).

3. Relaxation in SO 2 and SO 2+ rare gas mixtures: V.V.N. Kishore, S.V. Babu and V. Subba Rao, Proceedings of the Symposium on Fast Reactions, Thumba, India, K. Narayana Rao and J. P. Mittal, (Eds.), (1977).

4. Collisional energy transfer in CO 2-polyatomic molecule mixtures: P.R.M. Rao, S.V. Babu, Y.V.C. Rao and V. Subba Rao, Proceedings of the Symposium on Fast Reac­ tions, Thumba, India, K. Narayana Rao and J.P. Mittal, (Eds.), (1977).

5. Relaxation and dissociation in some polyatomic molecules: M. Tyagaraju, S.V. Babu, Y.V.C. Rao and V. Subba Rao, in Shock Tubes and Waves, C.E. Treanor and J. Hall, (Eds.), State University New York Press, Albany, p. 570 (1982).

6. m-6-8 potential and thermodynamic properties of CO 2: R. Mohan and S.V. Babu, p 509, in Chem. Engg. Thermodynamics, S.J. Newmann, (Ed.), Ann Arbor Science (1982).

7. A simple model for etching III-V materials in a CCl 4 plasma: S.V. Babu and P.C. Sukanek, p. 633 Proceedings of the Sixth International Symposium on Plasma Chemistry, Montreal (1983).

8. Prediction of ternary liquid-liquid equilibrium in type 3 systems using Van Laar and UNIQUAC models: M.S. Sivasubramanian, T. Chakravarty and S.V. Babu, p. 528 Proceedings of 34th Canadian Chemical Engineering Conference, Quebec, Oct. 1984.

9. Epoxy etch rate and activation energy in CF 4/O 2 plasma: N.H. Lu, S.V. Babu, J.F. Rembetski, C. Nilsen and J.A. Welsh, Proceedings of the Fifth Symposium on Plasma Processing, The Electrochemical Society, 1985, pp. 175 183.

10. Kinetic modeling of polymer etching in CF 4/O 2 plasmas: J.F. Rembetski, S.V. Babu, N.H. Lu and J.G. Hoffarth, Proceedings of the Fifth Symposium on Plasma Processing, The Electrochemical Society, 1985, pp. 184 192.

11. Optical density and contrast of positive photoresists: S.V. Babu and V. Srinivasan, in Advances in Resist Technology and Processing II, SPIE, 539, 1985, p.36.

12. The role of surface fluorination in polymer etching by CF 4/O 2 plasmas: S.V. Babu, L.A. Tiemann and R.E. Partch, P1025, Proceedings of the 7th International Symposium on Plasma Chemistry, Eindhoven, 1985.

13. Prediction of etch rate of polymers in CF 4/O 2 and O 2 plasmas: V. Srinivasan, M.S. Sivasubramani­an and S.V. Babu, P1405, Proceedings of the 7th International Symposium on Plasma Chemistry, Eindhoven, 1985.

14. Transient behavior of plasma reactors: S.V. Babu, J.F. Rembetski, W.A. Mlynko and J.G. Hoffarth, P1100, Proceedings of the 7th International Symposium on Plasma Chemistry, Eindhoven, 1985.

15. Modeling the dependence of contrast and linewidth on processing variables: V. Srinivasan and S.V. Babu, in Advances in Resist Technology and Processing III, SPIE, 631, 268, 1986 (C. Grant Willson, Ed.)

Research in processing of electronic materials: S.V. Babu and P.C. Sukanek, in Chem. Engg. Education, Fall 1986, 20, 186.

17. 193 nm laser assisted etching of polysilicon: M.D. Armacost, S.V. Babu, S.V. Nguyen and J.F. Rembetski, in Science and Technology of Microfabricati­on, R.E. Howard, E.L. Hu, S. Namba and S. Pang, (Eds.), Materials Research Society, Pittsburgh, PA, 1987, 76, 147.

18. Excimer laser applications: polymer etching and deposition: M. Ritz, S.V. Babu, V. Srinivasan and R.C. Patel, in Photon, Beam and Plasma Simulated Processes at Surfaces, V.M. Donnelly, I.P. Herman and M. Hirose (Editors), Materials Research Society, Pittsburgh, 75, 433 (1987).

19. Adhesion and crosslink gradient in a photoresist: R.L. Geary, S.V. Babu and J. Stephanie, in Surface and Colloid Science in Computer Technology, K.L. Mittal (editor), Plenum Press, p199 (1987).

20. Dopant diffusion in semiconductors: S.V. Babu, in Chemical Engineering Education in a Changing Environment, S. M. Sandler (Ed.), Engg. Res. Foundation, NY (1988).

21. Etching and surface modification of polymers in CF 4/O 2 discharges: P. Scott, S.V. Babu, R.E. Partch and L.J. Matienzo, in Electronic Packaging Materials Science, R. Jaccodine and R. C. Sundahl, (Eds.), Materials Research Society, Pittsburgh, PA, 1988, 108, 207 (1988).

22. Calculation of developed resist profiles by least action principle: E. Barouch, B. Bradie and S.V. Babu, in KTI Microelectronics Symposium, Interface '88, p. 187 196.

23. Three dimensional profile simulation for positive photoresists: E. Barouch, B. Bradie, and S.V. Babu, in Advances in Resist Technology and Processing VI, SPIE, 1086, 495 501.

24. Submicron resist profile simulation in three dimensions on reflective substrates: E. Barouch, B. Bradie, H. Fowler and S.V. Babu, in KTI Microelectronics Symposium, Interface '89, 123 136

25. Plasma deposition and etching of diamondlike carbon films: J. Seth, R. Padiyath, and S.V. Babu, in Applications of diamond films and related materials, Y. Tzeng, M. Yoshikawa, M. Murakawa, and A. Feldman, (Eds.), Elsevier, 851-856 (1991).

26. RF plasma-induced deposition of copper films on polymer surfaces: R. Padiyath, M. David, and S.V. Babu, Metallized Plastics 2, K. Mittal (Ed.), p113, Plenum Press, NY, 1991.

27. Plasma-induced deposition of copper films: R. Padiyath, J. Seth, S.V. Babu, and L.J. Matienzo, Metallized Plastics 3, K. Mittal (Ed.), Plenum, NY, p19, 1992.

28. Amorphous hydrogenated carbon films: Deposition and characterization: J. Seth, R. Padiyath, and S.V. Babu, in Proceedings of the International Conference on Beam Processing of Advanced Materials, J. Singh and S.M. Copley (Eds.), Chicago, TMS, p435, (1993).

29. Excimer laser-ablative deposition of cBN films: G.C. D'Couto and S.V. Babu, in Proceedings of the International Conference on Beam Processing of Advanced Materials, J. Singh and S.M. Copley (Eds.), Chicago, TMS, p357, (1993).

30. A comparative study of the photoablation of polyimide-doped poly(tetrafluoroethylene) at 308 nm and 248 nm: G.C. D'Couto, S.V. Babu, F.D. Egitto, and C.R. Davis: Proceedings of the MRS Fall 92 Symposium on Laser Ablation, MRS, Pittsburgh, 285, 157 (1993).

31. Synthesis of silicon nitride powders in pulsed rf plasmas: R.J. Buss, S.V. Babu and P. Ho, Proc. of the 9th Annual conf. on Fossil Energy Materials, Oak Ridge, May 1995.

32. Chemical-mechanical polishing of copper in acidic media: Q. Luo, D.R. Campbell and S.V. Babu, Proc. 1st Int’l. Conf. on CMP for VLSI/ULSI multilevel interconnection, p145, Santa Clara, Feb. 1996.

33. Pad degradation and conditioning studies for CMP of interlayer dielectric films: K. Achuthan, J. Curry, B. Sennet, M. Lacy, D. Campbell, and S.V. Babu, Proc. of the 1 st Int’l. Conf. on CMP for VLSI/ULSI multilevel interconnection, p32, Santa Clara, 2/96.

34. Chemical-mechanical polishing of copper: A Comparative analysis: Q. Luo, M. Fury, and S.V. Babu, Proc.2nd Int’l. Conf. on CMP for ULSI multilevel interconnection, p83, Santa Clara, Feb. 1997.

35. Mechanism of copper removal during chemical-mechanical polishing in alkaline media: Q. Luo and S.V. Babu, Proc.14th Int’l. Conf. on VLSI multilevel interconnection, p287, Santa Clara, June 1997.

36. Some fundamental and technological aspects of chemical mechanical polishing of copper films: S.V. Babu, R.A. Mackay, R.S. Subramanian, and A.A. Busnaina, Proc. 3rd Int’l. Conf. on CMP for ULSI multilevel interconnection, p385, Santa Clara, Feb. 1998 (Invited Paper).

37. Investigation of Cu and Ta polishing using hydrogen peroxide, glycine, and a catalyst: S.V. Babu, Y. Li, M. Hariharaputhiran, S. Ramarajan, J. Zhang, Y.S. Her, and J.F. Prendergast, Proc.15th Int’l. Conf. on VLSI multilevel interconnection, p437, Santa Clara, June 1998.

38. Electrochemical behavior of metal-doped diamondlike carbon films in aqueous solutions: M. Sunkara, M. Wadsborn, E. Yeap, V. Ralchenko, B.N. Pypkin, M.L. Shubekin and S.V. Babu, Proc. Electrochem. Soc. Symp., Paris, 32, 324 (1998).

39. Resistance of a-C:H and a-C:H,F films to anodic dissolution in aqueous electrolytes: C. Srividya, M. Sunkara, and S.V. Babu, Proc. Electrochem. Soc. Symp., Paris, 32, 324 (1998).

40. Copper dissolution and chemical-mechanical polishing in acidic media, Q. Luo, D.R. Campbell, Proc. Electrochem. Soc. Symp., Paris, 32, 73 (1998).

41. Excimer laser-induced ablation of doped poly(tetrafluoroethylene): C.R. Davis, F.D. Egitto, and S.V. Babu, in Fluoropolymers, G. Houghan et al (eds.), Plenum Publishing, 1999.

42. The role of alumina particle hardness/elastic modulus in chemical-mechanical polishing of Cu, Ta, and W: S. Ramarajan, M. Hariharaputhiran, and S.V. Babu, Proc. 4th Int’l. Conf. on CMP for ULSI multilevel interconnection, p430, Santa Clara, Feb. 1999.

43. The influence of pH and temperature on polish rates and selectivity of silicon dioxide and nitride films: W. G. America, R. Srinivasan and S.V. Babu, in Chemical-Mechanical polishing: Fundamentals and challenges, Materials Research Society, p13, 566, 1999.

44. Role of film hardness on the polish rates of metal thin films: S. Ramarajan, Y. Li, M. Hariharputhiran, Y.S. Her, and S.V. Babu, in Chemical-Mechanical polishing: Fundamentals and challenges, Materials Research Society, p123, 566, 1999.

45. Mechanism of copper removal during CMP in H 2O 2-Glycine based slurries: M. Hariharaputhiran, S. Ramarajan, Y. Li, and S.V. Babu in Chemical-Mechanical polishing: Fundamentals and challenges, Materials Research Society, p129, 566, 1999.

46. Modified Preston equation – revisited: S. Ramarajan and S.V. Babu in Chemical-Mechanical polishing: Fundamentals and challenges, Materials Research Society, p149, 566, 1999

47. Role of Chemicals and abrasive particle properties in chemical-mechanical polishing of Cu and Ta: Y. Li, A. Jindal, and S.V. Babu in Copper Interconnects, New contact metallurgies, and Low-k Interlevel Dielectrics (G.S. Mathad and H.S Rathore, eds), ECS Symposium Proceedings, p32, PV2000-27, 2000

48. Slurry Retention and transport during chemical-mechanical polishing of Copper: A. Jindal, S. Narayanan and S. V. Babu, in Chemical-Mechanical Polishing 2001 – Advances and Future Challenges, Materials Research Society, M4.10, 671, 2001

49. Effect of pH on Chemical-Mechanical Polishing of Copper and Tantalum: A. Jindal, Y. Li, and S. V. Babu, in Chemical-Mechanical Polishing 2001 – Advances and Future Challenges, Materials Research Society, M6.8, 671, 2001

50. Chemical mechanical planarization of Cu and Ta: Some recent developments: Y. Li, and S.V. Babu, Semiconductor FabTech, 259, 13, 2001

51. Evaluation of alumina/silica mixed abrasive slurries for chemical-mechanical polishing of copper and tantalum: A. Jindal, S. Hegde, and S.V. Babu, Proceedings of the 18 th Int’l VLSI multilevel interconnection conf. , p297, 2001

52. Mixed abrasive slurry: a study of metal CMP: A. Jindal, S. Hegde and S.V. Babu; Semiconductor FabTech , 16 , 239, 2002

53. Pattern Density Effects in Fixed Abrasive Polishing: R. Venigalla, L. Economikos, and S.V. Babu, in Chemical-Mechanical Planarization 2002 , Materials Research Society, I2.2.1, 732E , 2002

54. Mixed Abrasive CMP: A Study on Metal and Dielectric Films: A. Jindal, S. Hegde, and S.V. Babu, in Chemical-Mechanical Planarization 2002 , Materials Research Society, I3.6.1, 732E , 2002

55. Evaluation of Monodispersed Silica Particles and Ceria Coated Silica Particles for Chemical Mechanical Polishing: Z. Lu, S-H. Lee, E. Matijevic, and S.V. Babu, in Chemical-Mechanical Planarization 2002 , Materials Research Society, I3.7.1, 732E , 2002

56. Study of Slurry Composition Transition in a Rotary Copper CMP Process: S. Hedge, U.B. Patri, A. Jindal, and S.V. Babu, in Chemical-Mechanical Planarization 2003 , Materials Research Society, F1.5.1, 767 , 2003

57. The Effects of Particle Adhesion in Chemical Mechanical Polishing: Z. Lu, S.V. Babu, and E. Matijevic, in Chemical-Mechanical Planarization 2003 , Materials Research Society, F3.5.1, 767 , 2003

58. Electrochemical Studies of Copper Chemical Mechanical Polishing Mechanism: Effects of Oxidizer Concentration: J. Lu, J.E. Garland, C.M. Petite, S.V. Babu, and D. Roy, in Chemical-Mechanical Planarization 2003 , Materials Research Society, F6.4.1, 767 , 2003

59. Comparison of Glycine and Citric Acid as Complexing Agents in Copper Chemical-Mechanical Polishing Slurries:V. R. Gorantla and S. V. Babu, in Chemical-Mechanical Planarization 2003, Materials Research Society, F6.7.1, Vol. 767, (2003).

60. Effect of surface charges on silicon dioxide and nitride planarization using alumina/ceria mixed abrasive slurries: S. Hegde and S.V. Babu, 20 th VMIC conf. Proceedings , p519, 2003.

61. Planarization of metal and dielectric films: new approaches: S. Hegde and S. V. Babu, in Semicon, Japan, Tokyo 2003

62. Chemical-mechanical planarization of metal and dielectric thin films: V.R. Gortantla and S.V. Babu, in Role of Chemical Engineering in Processing of Minerals and Materials, J.N. Mohanty et al (Eds.), Chemcon-2003, Bhubaneswar, India

63. General Principle of Planarization Governing CMP, ECP, ECMP & CE - Low down force planarization technologies: M. Tsujimura, I. Noji, A. Fukunaga, S.V. Babu, Proceedings of VLSI Multilevel Interconnection Conference, Tampa, FL, September 2004.

64. The use of methylsilsequioxane interlevel dielectric films in multilevel metallization: Vinay Meled, Sachin Pandija, Egon Matijevi and S.V. Babu, Pac-Rim CMP 2005, Jin-Goo Park et al (Eds), Seoul, Korea, p3

65. Effect of Slurry Chemistries on Planarization Efficiency and Removal during Copper CMP: Youngki Hong, V.K. Devarapalli, S. Pandija and S.V. Babu, Pac-Rim CMP 2005, Jin-Goo Park et al (Eds), Seoul, Korea, 2005, p203

66. Novel slurries for achieving a low silicon dioxide and high silicon nitride removal during chemical-mechanical planarization: A. Natarajan, Dandu Veera P R, and S.V. Babu, International conf. on planarization tech., Proceedings of Int’l conf. on Planarization Tech. 2007, Dresden, VDE VERLAG GMBH, p123

67. Effects of ceria size and concentration in Shallow trench isolation chemical mechanical planarization: S.Pandija, S.V. Babu, G. Criniere and C. Cientrey, Proceedings ofInt’l conf. on Planarization Tech. 2007, Dresden, VDE VERLAG GMBH, p257

68. A single dispersion for Cu and barrier layers: S.V.S.B. Janjam, V.V.S.C Surisetty, S, Pandija, D. Roy and S.V. Babu, Semiconductor Technology (ISTC 2008), Shanghai, p 561

69. Single dispersion to polish bulk and residual Copper along with barrier layers: S. V. S. B. Janjam, V. Kamavaram, D. Roy and S. V. Babu, Proceedings of Int'l Conf. on Planarization Technology, Taipei, 2008

70. Novel Ceria slurries for achieving high silicon nitride and low silicon dioxide polishing rates: Dandu Veera P. R, Devarapalli Vamsi, S. V. Babu, Guillaume Criniere and Claude Ceintrey: Proceedings of Int'l Conf. on Planarization Technology, Taipei, 2008

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