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S.V. Babu

Distinguished University Professor and Director, CAMP
305 CAMP
Clarkson University
PO Box 5665
Potsdam, NY 13699-5665

Phone: 315-268-2336
E-mail: babu@clarkson.edu 

Educational Background:

Ph.D. (Physics) SUNY at Stony Brook, USA, 1971
Graduate study in Chemical Engineering Johns Hopkins Univ., Baltimore, USA, 1963-66
M.Tech (Chem. Eng.) Indian Inst. of Tech., Kharagpur, INDIA, 1963
B.Tech (Chem. Eng.) Andhra University, INDIA, 1962

Jobs Held:

  • 2004: Distinguished University Professor, Clarkson University
  • 1999: Director, Center for Advanced Materials Processing, Clarkson University
  • 2001-04: Vice Provost, Research, Clarkson University
  • 1986-04: Professor of Chemical Engineering, Clarkson University
  • 5/94-8/94: University summer faculty, Sandia National Laboratory, Albuquerque, NM
  • 1987-88: Visiting Scientist, Bell Communications Research, Red Bank, NJ
  • 1982-85: Summer Faculty/Visiting Professor, IBM, Endicott (during summers)
  • 1981-86: Associate Professor of Chemical Engineering, Clarkson University
  • 1979-81: Professor of Chemical Engineering, Indian Inst. of Tech, Kanpur
  • 1972-79: Assistant Professor of Chemical Engineering, Indian Inst. of Tech, Kanpur
  • 1970-72: Post doctoral fellow, Dept. of Chemistry, New York University
  • 1969-70: Visiting Scientist, Niels Bohr Institute, Copenhagen, Denmark; and International Center for Theoretical Physics, Trieste, Italy

 Professional and Honor Socities:

Member: Sigma Xi, Tau Beta Pi; American Institute of Chemical Engineers, Electrochemical Society, American Chemical Soc., and Materials Research Society.

Professional Activities and Honors:

IBM faculty award 2004, NCL Prof. K. Venkataraman Distinguished Speaker, CHEMCON 2003, India, 12/03; Inaugural Dongjin Lecturer, 2002 KSIEC Fall  Meeting, Ansan, and at Samsung, Seoul, Korea, 10/02; Keynote Speaker, LAM Research European Technical Symp., Saint-Cyr-sur-Mer, France, 10/00; Plenary speaker, Indian Chem. Engg. Congress, Baroda, 1988

Co-organized symposia on Micro and Nano Technology, Joint AIChE/IIChE conf., Mumbai, Dec 2004, on Colloid chemistry at the Amer. Chem. Society meeting in Boston (8/02), Co-organized and co-chaired symposia on Chemical-mechanical planarization at the AIChE annual conf., Austin, Nov. 2004, the ’99, ’01, and ’02 Spring MRS meetings, San Francisco, and all the twelve annual meetings in Lake Placid, NY (1996-2007) and the 13th in Aug. 2008;

Invited speaker, Electrochem. soc./Int’l. semiconductor Tech. conf., Shanghai, 3/06, 3/07, and 3/08, 1st China semiconductor materials conf. Shanghai, 3/2008; Int’l conf. planarization Tech., Foster City, 10/06, and Dresden, 10/07; PacRim CMP conf. Seoul, 2005;  MRS Spring meeting, San Francisco, March 2005, ACS Annual Conf., San Diego, March 2005; at the Optical Soc. Annual Conf, Oct .2004 and the Northeast Regional ACS conf., Nov. 2004, both in Rochester; Semicon Japan 12/03; CMPUG Conf., Santa Clara, 9/03; World Congress on Adhesion, Orlando, Feb. 2002; Electrochemical Soc. Meeting, Phoenix, 10/00; Adv. Metallization Conf., Orlando, 9/99; 3rd Int’l Conf. on CMP for ULSI Multilevel Interconnection, Santa Clara, Feb., 98; Joint Int’l meeting of the Electrochem. Society and the Int’l Society of Electrochem., Paris, 9/97; Fundamenta­ls of Adhesion and Interfaces, ACS, Orlando, 8/96; Surface Engg. Symposium, ASM, Cincinnati, 10/96; Int’l Symposium on Beam Processing of Adv. Materials, Amer. Soc. Metals, Cleveland, 10/95; Invited Speaker, Int’l Conf.on Processing and Advanced Applications of Lasers, Palm Coast, Florida, May 1994; Indo-US Joint International Symp. on Multiphase Reactions and Reactors, Bombay, Dec. 1993; Int’l Conf. on Beam Processing of Advanced Materials, TMS/ASM meeting, Chicago, 1992. Invited speaker, International Workshop on Laser Ablation, Munich, Germany, June 1992; Also at IBM, Endicott in June 1992 and at 3M in St. Paul in Nov. 1992; Organizer and Co‑chair, Laser‑based Processing and Diagnostics of Materials, 20th Amer. Chem. Soc. NE Regional Meeting, Potsdam, NY, 1990. Co‑chair, Thermodynamics, Int’l. conf. on Adv. in Chem.­ Engg, Kanpur, India, 1989. Organizer and chair, Workshop on "Polymers in Electronic Packag­ing," Princeton, NJ, 1988. Invited speaker, Engg. Res. Foundation Conference on "Chem. Engg. Education in a Changing Environment," Santa Barbara, 1988; Organizer and chair, Seminar‑workshop on "Polymers in Electron­ics" at Plas‑Tech 86, Atlantic City, NJ, 1986.  Invited speaker, Soc. Photographic Scientists and Engg. meeting, Minneapolis, 1986.

Member, NSF SBIR panel, 8/96, 10/02; and NSF ERC Site Review Team, Center for Interfacial Engg., U. Minn, 6/95& 6/96;

Chair, Symp. on Semiconductor Manufactur. & Packaging, AIChE meeting, San Francisco, 11/94;

Consulting:

Many companies including St. Gobain, Strausbaugh, Kodak, J.M. Huber, IBM, Climax Engineered materials, Umicore, PPG, Rodel, Rhodia, and other Chemical-Mechanical Polishing consumable suppliers, Ultra Clean Technology (Contamination effects on film deposition), Calspan Corp., Buffalo (Thin film thermal gauges), 3M, St. Paul (Diamondlike carbon films), Acton Research (Thin Films), Honeywell (Electronics Packaging Technology), and IBM, Endicott (Plasma Processing Technology).

Contracts and Grants Administered:

In addition to the grants/contracts listed below, I am responsible from Oct. 1999, as the Director of the Center for Advanced Materials Processing (CAMP), for obtaining and administering $1,000,000/yr from NYSTAR and over $350,000/yr from corporate membership dues.

  1. Two Senior Research Fellowships, CSIR (India), 1975-77.
  2. Blast and detonation waves in reactive gas media, Ministry of Defense, Govt of India, 1978-80 (With Dr. V. Subba Rao). 
  3. Laser catalyzed chemical reactions, CSIR (India), 1979-81 (With Dr. V. Subba Rao) 
  4. Photoresist exposure optimization and plasma processing, IBM (Endicott), 1982-85, $62,420.
  5. Laser hole drilling, IBM (Endicott), 1982-83, $13,427.
  6. Additive bath circulation and plasma processing, IBM (Endicott), 1984-86, $53,395;
  7. Excimer laser induced etching, IBM (Essex Junction), 1985-86, $23,120;
  8. Photoresist kinetics and plasma processing, IBM (Endicott), 1985 87, $81,887. (Project  costs listed under 4-8 do not include salary support for the 10 graduate students while they were at the IBM sites performing thesis research; Additional cost: ~$120,000). 
  9. Laser induced deposition and spectroscopy, National Science Foundation, 1985 86,  $38,300; matched by Clarkson University for $38,300 (with R. Patel).
  10. Excimer laser interaction with polymer materials, Honeywell Corp., 1985, $13,500.
  11. Effect of process conditions on photoresist develop rate, Department of Defense,1986-87, $40,291, (with P. Sukanek).
  12. Studies of optical microlithographic processes, National Science Foundation, 1987-91,  $265,957, (with E. Barouch).
  13. RF Plasma reactor, NY State Center for Advanced Technology, 1987, $105,000.
  14. Monodispersed refractory particles by plasma techniques, NY State Center for Advanced  Materials Processing, 1987-91, $133,030 (with D. Rasmussen).
  15. Reliability studies on copper polyimide device structures, Rome Air Development Center     (through U. of Dayton), 1990-91, $70,052 (with D. Rasmussen).
  16. IBM graduate fellowship, 1990-91, $14,304.
  17. Excimer laser drilling of polymers and polymer composites, IBM, 1990-93, $144,992.
  18. Departmental Grant, IBM, 1991-94, $75,000 (with D. Rasmussen).
  19. RIE etching of Al and Al/Cu alloys, NY State Center for Advanced Materials Processing, $47,000, 1991-93, (with D. Rasmussen).
  20. AutoEtch 690 reactor for etching Al/Cu films, LAM Research, cost $288,000, 1991.
  21. Modeling of particle transport and deposition in a sputtering tool, SEMATECH, $83,755, 1992, (with A. Busnaina).
  22. Temperature distribution and its impact on adhesion and other mechanical characteristics in film-particle systems, Kodak Corp., $90,000, 1992-94, (with A. Busnaina).
  23. Laser surface treatment for adhesion enhancement, NY State Center for Advanced Materials Processing, $33,200, 1992-93 (with E. Sancaktar).
  24. 24. Film and particulate deposition and etching in plasma reactors, NY State Center for Advanced Materials Processing, $46,500, 1992-93 (with A.A. Busnaina).
  25. 25. Studies of plasma processing for pattern transfer, US Army through Princeton University, $100,000, 1992-93, (with E. Barouch).       
  26. Studies of thin film deposition processes and chemical-mechanical polishing, NY State Center for Advanced Materials Processing, $122,842, 1993-95.
  27. High performance DLC coatings for electronic circuits, Teledyne, $105,000, 1993-96.
  28. Thin film resistors as thermal gauges, Calspan Corp., $34,403, 1993-94.
  29. Diamondlike carbon film coatings, Kodak Corp., $100,000, 1993-96.
  30. Contamination-free processing, Ultra Clean Technology, $15,987, 1994.
  31. Toxicity and process management for MOCVD copper precursors by quadrupole mass spectrometry, NYSERDA through CVC Products, $50,000, 1994-95 (with D. Campbell). 
  32. Thin film technologies: Combined research-curriculum development: National Science Foundation, $409,590, 1994-98, (with D. Rasmussen and I. Suni).
  33. Chemical-mechanical polishing, R.H. Strasbaugh, Inc., $36,036, 1995-96.
  34. Photo sol-gel net shape processing and laser machining/cutting of ULE glass, Kodak, $85,700, 1996-97, (with R. Mackay).
  35. Chemical-mechanical polishing of MOCVD copper films, NYSERDA through CVC Products, $53,500, 1996-97 (with D. Campbell).
  36. Rodel/Sandia Co-op project on CMP, Rodel, $36,000, 1996.
  37. Diamondlike carbon and fluorocarbon film coatings, Kodak Corp., $150,000, 1996-99.
  38. Tungsten Polishing, MiCrus, $25,240, 1996-97.
  39. Improved submicron particles for CMP of integrated circuit structures, NYSERDA through Ferro Corp., $100,000, 1997-98.
  40. MOCVD process for BST films, CVC Products, $43,000, 1997-99.
  41. Graduate Research Fellowship, National Science Foundation, $75,500, 1997-02.
  42. Diamondlike carbon (DLC) coatings for hybrid hermeticity, Teledyne Microelectronics, $30,000, 1997-98.
  43. Role of slurry particles and chemistry in the CMP of copper, INTEL, $70,000, 1998-2000.
  44. Acquisition of instrumentation for a thin film characterization facility, $158,655, National Science Foundation, and Clarkson Cost-sharing, $67,995, 1998-99 (with A. Busnaina, Y. Li, R. Mackay, and I. Suni).
  45. Copper CMP slurry development, Grace Davison, $41,000, 1998-99.
  46. Improved submicron particles for CMP of integrated circuit structures, Phase II, NYSERDA through Ferro Corp., and Ferro Corp.,  $194,600, 1998-2000.
  47. Chemical-mechanical polishing, Kodak, $200,000, 1998-2002
  48. Support for Ramanathan: Ferro Corp., $23,184, 1999
  49. Metal polishing using polishing particles: Rodel, $95,300, 1999-2001
  50. Development and assessment of hypermedia-based instruction in colloidal technology, National Science Foundation, $249,748, 1999-2002 (with I. Suni, D. Rasmussen, J. Fendler, and R. Mackay).
  51. Polishing for ultrafast devices, Advanced Vison Technologies, $48,310, 2000-01
  52. Polishing of metal and oxide films using silica abrasives, PPG Silicas, $86,600, 2000-01
  53. Investigations on the role of abrasive shape, size and morphology in chemical-mechanical polishing: Intel/SRC, $375,000, 2000-03 (with E. Matijević)
  54. Chemical-mechanical polishing using specialized abrasives, NYACOL, $227,000, 2000-04
  55. Ceria slurries & slurry development, Kodak, $120,000, 2001-04
  56. Magnetically-assisted CMP of low-k polymers, National Science Foundation thru Univ. of Pittsburgh,  $72,776, 2001-2005
  57. Evaluation of slurries for CMP: JM Huber, $32,500, 2002
  58. Chemical-Mechanical Polishing for Micro-opto-electro-mechanical systems fabrication; Infotonics Technology Center, $232,875, 2002-05 (with J.A. Kubby, Xerox)
  59. Phase characteristics of cerium composite nanoparticles and CMP mechanisms: Ferro, $83,664, 2003-04
  60. CMP mechanisms of thin film head materials, Seagate Technology, $19,996, 2003
  61. Deposition of diamondlike carbon films and application of Silica-coated polymer particles, Kodak, $60,000, 2002-04
  62. Identification and development of unique slurries for Cu and Low-k CMP, Climax Engineered Materials, $197,000, 2003-05.
  63. Preparation of metallic and metal composite particles for obscurant smokes: Defense Army Acquisitions Division, $1,350,000, 2003-04 (with D. Goia and R. Partch)
  64. Evaluation of a novel conditioner for CMP, TBW Industries, $40,000, 2003-04 (with Y. Li)
  65. Investigation of semiporous polymeric interlevel dielectric films for use in multilevel metallization structures, Intel/SRC, $380,000, 2003-06 (with E. Matijević)
  66. Retainer Ring Project: St. Gobain, $29,478, 2003-04
  67. Joint research Support for Dorfman, NanoDynamics, $84,721, 2004-06
  68. Preparation of metallic and metal composite particles for obscurant smokes: Defense Army Acquisitions Division, $2,713,100, 2004-06 (with D. Goia and R. Partch)
  69. Copper and Tantalum disk polishing, UOP, $35,000, 2004-05
  70. Evaluation of ceria abrasives, UMICORE, $15,000, 2004
  71. Optimized CMP process, Corning, $30,000, 2004-05
  72. Effect of polymer particles in barrier CMP slurry, JSR Chemicals, $70,000, 2005-07
  73. Smart responsive nanostructures for soldier protection, Army Research Office, $1,428,574, 2005 - 09
  74. NYSTAR CAT Development 2, Ferro Project, $105,392, 2007-08, (with I. Sokolov)
  75. Industrial Firm research project: Free Form Fibers, $170,697, 2007-08
  76. Evaluation and optimization of formulation for STI and ILD, Rhodia, $101,500, (2006-08)
  77. New abrasives and dispersions for barrier film CMP, BASF, $140,000, 2007-09 (with R. Partch)
  78. Chemical mechanical planarization, Micron Foundation, $135,206, 2007-09 (with R. Partch)
  79. Planarization of Cu and Ta films/patterned structures and evaluation of compatibility with low-k dielectric films, IBM through SRC, $60,000, 2008-09 (with Prof. Roy)
  80. Preliminary Evaluation of CMP pads: WL Gore, $10,000, 2008

Patents:

Silica and silica-based slurry: S.D. Hellring. C.P. McCann, Suryadevara Babu, Yuzhuo Li, S. Narayanan, R. Auger, 7,279,119 (Oct. 2007)

Polishing slurries and methods for chemical mechanical polishing Sunil Jha, Sreehari Nimmala, Sharath Hegde, Youngki Hong, Suryadevara Babu, and Udaya Patri, U. S. Patent, 7,186, 653 (March 2007)

Chemical-mechanical polishing slurry and method: Y-S Her, R. Srinivasan; Suryadevara Babu, S. Ramarajan, US patent 7,101,800 (Sept 2006)

Slurry for chemical mechanical polishing silicon dioxide: R. Srinivasan, Suryadevara Babu, W.G. America, and Y-S. Her, U.S. Patent 7,091,164 (August 2006)

Polishing compositions comprising polymeric cores having inorganic surface particles and method of use: Dennis Smith and S.V. Babu; U.S. Patent 6,918,820 (July 2005)

Chemical-mechanical polishing slurry and method: Y-S. Her, R. Srinivasan, S.V. Babu and S. Ramarajan, U.S. patent 6,702,954 (March 2004)

Slurry for chemical mechanical polishing of silicon dioxide: R. Srinivasan, S.V. Babu, W.G. America, and Y-S. Her, U.S. Patent 6,627,107 (Sept., 2003)

Slurry for chemical mechanical polishing of silicon dioxide: R. Srinivasan, S.V. Babu, W.G. America, and Y-S. Her, U.S. Patent 6,544,892 (April, 2003)

Slurry for chemical mechanical polishing of silicon dioxide: R. Srinivasan, S.V. Babu, W.G. America, and Y-S. Her, U.S. Patent 6,468,910 (Oct. 2002)

Slurry for chemical mechanical polishing of silicon dioxide: R. Srinivasan, S.V. Babu, W.G. America, and Y-S. Her, U.S. Patent 6,491,843 (Dec. 2002)

Electrophotographic apparatus with improved blue sensitivity: S.A. Visser, D.S. Rimai, P.M. Borsenberger, S.V. Babu, U.S. Patent 6,007,954 (Dec. 99)

Method of making multilayer electrophotographic photoconductive elements: S.A. Visser, D.S. Rimai, P.M. Borsenberger, S.V. Babu, 5,849,443 (Dec. 1998).

Multilayer photoconductive elements having low dark decay: S.A. Visser, D.S. Rimai, P.M.Borsenberger, S.V. Babu, U.S. Patent 5,849,445 (Dec. 1998).

Method of making corrosion resistant electrical components: C.V. Srividya and S.V. Babu, U.S. Patent, 5,840,427 (Nov. 1998).

Fuser members with an outermost layer of a fluorinated diamondlike carbon film, S.A. Visser, S.V. Babu, and C.V. Srividya, U.S. Patent 5,674,621 (Oct.1997).

Plasma conditioning of a surface towards electroless plating: G.W. Jones, N.H. Lu and S.V. Babu, U.S. Patent 5,061,359 (Oct. 1991).

Method of plasma etching a substrate with a gaseous organohalide compound: S.V. Babu, J.G. Hoffarth, K. Mack, W. Mlynko, J.F. Rembetski and A. Knoll, U.S. Patent 5,053,104 (Oct. 1991).

Interlaminate adhesion between polymeric materials and electrolytic Cu surfaces: S.V. Babu, V.Q. Bui, J.G. Hoffarth and J.A. Welsh, U.S. Patent 4,810,326.

Removal of residual catalyst from a dielectric substrate: P. Agostino, S.V. Babu, and J. Hoffarth, U.S. Patent 4,735,820 (April 1988).

Method of removing seed particles from circuit board substrate surface: S.V. Babu, W.F. Hermann, J.G. Hoffarth, V. Markovich, R.T. Wiley, U.S. Patent 4,718,972 (1988).

Uniform plasma reactor for drill smear removal: S.V. Babu, R.S. Horwath, Neng-Hsing Lu and J.A. Welsh, U.S. Patent 4,618,477 (Oct. 1986).

Plasma etching with tracer: S.V. Babu, J.G. Hoffarth and J. Welsh, U.S. Patent 4,599,134 (July 1986).

Recent Publications: (For Complete Publications Click Here)

2008

Colloidal aspects of chemical mechanical planarization: E. Matijević and S.V. Babu, J. Colloid and Surf. Sci. 320, 219 (2008)

Oxalic Acid Based Slurries with Tunable Selectivity for Copper and Tantalum Removal in CMP: S. B. Janjam, C. Surisetty, S. Pandija, D. Roy, S.V. Babu, Electrochem. & Solid State Lett., 11, H66 (2008)

Investigation of dissolution inhibitors for electrochemical mechanical planarization of copper using beta-alanine as a complexing agent: B. K. Klug, C. M. Pettit, S. Pandija, S. V. Babu, and D. Roy, J Applied Electrochemistry (in press)

Achievement of high planarization efficiency in for copper polishing at a reduced down pressure: S. Pandija, D. Roy, and S.V. Babu. Microelectronic Engineering( submitted)

Dissolution inhibition in Cu CMP using dodecyl benzene sulfonic acid surfactant with oxalic acid and glycine as compexing agents: C.V.S. Surisetty, P.C. Goonetilleke, D. Roy and S.V. Babu, J. Electrochem. Soc. (Submitted)

Aminoacid interactions with silicon dioxide and silicon nitride surfaces and ceria abrasives during chemical mechanical planarization for shallow trench isolation: S. Hegde, W.G. America, T. Oja and S.V. Babu (submitted)

2007

Comparison of dicarboxylic acids as complexing agents for abrasive-free chemical mechanical planarization of copper: S. Ramakrishnan, S.B. Janjam, U.B. Patri, D. Roy, and S.V. Babu, Microelectronic Engineering 84, 80 (2007).

A model of pad – abrasive interactions in chemical mechanical polishing: E. Paul, J. Horn, Ying Li and S.V. Babu, Electrochem. & Solid State Lett. 10, H131 (2007)

Chemical-mechanical planarization of copper using abrasive free solutions of oxalic acid and hydrogen peroxide: S. Pandija, D. Roy and S.V. Babu, Materials Chem. And Phys. 102, 144 (2007)

Synergistic Roles of Dodecyl Sulfate and Benzotriazole in Enhancing the Efficiency of Chemical-Mechanical Planarization of Copper: Y. Hong, V. K. Devarapalli, D. Roy and S.V. Babu: J. Electrochemical Soc. 154, H444 (2007)

2006

Electrochemical impedance characteristics of Ta/Cu contact regions in polishing slurries used for planarization of Cu and Ta: K.A. Assiongbon, S.B. Emery, V.R.K.Gorantla, S.V. Babu and D. Roy, Corrosion Science 48,  372 (2006)

Interaction between abrasive particles and films during chemical-mechanical polishing of copper and tantalum: Ying Li, Junzi Zhao, Ping Wu, Yong Lin, S.V. Babu and Yuzhuo Li, Thin Solid Films 497, 321 (2006)

Role of the functional groups of complexing agents in copper slurries: Udaya Patri, Serdar Aksu and S.V. Babu, J. Electrochem. Soc. 153,  G650 (2006)

2005

Chemical effects in chemical-mechanical planarization of TaN: Investigation of surface reactions in a peroxide-based alkaline slurry using Fourier transform impedance spectroscopy: V.R.K. Gorantla, S. B. Emery, S. Pandija, S.V. Babu, D. Roy, Materials Letters 59, 690 (2005)

Oxalic acid as a complexing agent in copper planarization slurries: V.R.K.Gorantla, A. Babel. S, Pandija and S. V. Babu, Electrochem. And Solid State Lett. 8, G131-G134, (2005)

Citric acid as a complexing agent in chemical-mechanical planarization of copper: Investigation of surface reactions using impedance spectroscopy: V. R. K. Gorantla, K. A. Assiongbon, S. V. Babu, and D. Roy, J. Electrochem. Soc. 152, G404, (2005)

Ammonium dodecyl sulfate as a dissolution inhibitor surfactant for electrochemical mechanical planarization of copper: Y. Hong, D. Roy and S.V. Babu, Electrochemistry and Solid-State Letters 8, G297 (2005)

Amino acids as complexing agents during chemical mechanical planarization of Cu: V.R.K. Gorantla, E. Matijević, and S.V. Babu, Chemistry of Materials 17, 2076-80, (2005)

Voltage initiated material removal for electrochemical mechanical planarization of copper in NO3 - , glycine and H2 O2 containing electrolytes: P.C. Goonetillake, S.V. Babu and D. Roy, Electrochem. And Solid State Lett. 8, G190, (2005)

Particle adhesion studies relevant to chemical mechanical polishing: Zhenyu Lu, Niels P. Ryde, S.V. Babu, and E. Matijević, Langmuir 21, 9866, (2005)

Chemical-mechanical polishing of Copper using Molybdenum dioxide slurry: S. Hegde, U. Patri and S.V. Babu, J. Mater. Res. 20, 2553 (2005)

The role of amine and carboxyl functional groups of complexing agents in slurries for chemical mechanical polishing of copper: V.R. Gorantla, D. Goia, E. Matijević, and S.V. Babu, J. Electrochem. Soc. 152, G 912 (2005)

Utility of dodecyl sulfate surfactants as dissolution inhibitors in chemical mechanical planarization of copper: Y. Hong, U.B. Patri, S. Ramakrishnan, D. Roy and S.V. Babu: J. Materials Res. 20, 3413 (2005)

2004

Relative Roles of H2O2 and Glycine in Chemical Mechanical Polishing of Copper Studied with Impedance Spectroscopy: J. Lu, J.E. Garland, C.M. Pettit, S.V. Babu, D. Roy, J. Electrochem. Soc. 151, G717, (2004).

Chemical role of peroxide-based alkaline slurries in chemical-mechanical polishing of Ta: Investigation of surface reactions using time resolved impedance spectroscopy: K.A. Assiongbon, S.B. Emery, C.M. Pettit. S.V. Babu and D. Roy, Materials Chem. And Phys. 86, 347, (2004) .

Effect of pH on chemical-mechanical polishing of Cu and Ta: A. Jindal and S.V. Babu: J. Electrochem. Soc. 151, G709, (2004)

Slurry additive effects on the suppression of silicon nitride removal during chemical-mechanical polishing: W.G. America and S.V. Babu, Electrochem. and Solid State Lett. 7, G327, (2004)

Study of surface charge effects on oxide and nitride planrization using alumina/silica mixed abrasive slurries: S. Hegde and S.V. Babu, Electrochem. and Solid State Lett. 7, G317, (2004)

2003

Effect of pH and H2O2 on Ta CMP: Electrochemistry and XPS Studies: S. C. Kuiry, S. Seal, W. Fei, J. Ramsdell, V. Desai, S.V. Babu and Y. Li, J. Electrochem. Soc. 150, C36, (2003)

The effects of process variables on properties and composition of a-Si:C:H films: I. Moskowitz, W. Lanford, and S.V. Babu, J. Materials Res. 18, 129, (2003)

Chemical Mechanical Polishing of Dielectric Films Using Mixed Abrasive Slurries: A. Jindal, S. Hegde, and S.V. Babu, J. Electrochem. Soc., 150, G314, (2003)

The use of monodispersed colloids in the polishing of Copper and Tantalum: Z. Lu, S-H Lee, S.V. Babu, and E. Matijević, J. Colloid and Interface Sci. 261, 55, (2003)

Study of Pattern Density Effects in CMP Using Fixed Abrasive Pads: V. Gorantla, R. Venigalla, L. Economicos, D. Connor, and S.V. Babu, J. Electrochem. Soc. 150, G821, (2003)

Mechanism and an empirical model of fixed abrasive polishing process on a web-format tool: R. Venigalla, L. Economicos, and S.V. Babu, J. Mater. Res. 18, 1659, (2003)

Removal of shallow and deep scratches and pits from copper wafers: S. Hegde and S.V. Babu, Electrochem. and Solid State Letters, 6, G126, (2003)

Effect of mixed abrasives in chemical mechanical polishing of oxide films: Z. Lu, S-H Lee, V.R. Gorantla, S.V. Babu, and E. Matijević, J. Mater. Res. 18, 2323, (2003)

2002

Chemical-mechanical polishing using mixed abrasive slurries: A. Jindal, S. Hegde, and S.V. Babu, Electrochem. and Solid State Letters 5, G48, (2002).

Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria: S-H Lee, Z. Lu, S.V. Babu, and E.Matijevic, J. Materials Res. 17, 2744, (2002)

Mixed abrasive slurry: a study of metal CMP: A. Jindal, S. Hegde and S.V. Babu; Semiconductor Fab Tech 16, (2002)

2001

Chemical-mechanical polishing of copper and tantalum films in potassium iodate-based slurries: Ying Li and S.V. Babu, Electrochem. and Solid State Letters 4, G20, (2001)

Surface morphology and quality of a-Si:C:H: films: I. Moskovitz and S.V. Babu, Thin Solid Films 385, 48, (2001)

Chemical-mechanical polishing of Cu and Ta films using silica abrasives: Y. Li, M. Hariharaputhiran, and S.V. Babu, J. Mater. Res. 16, 1066, (2001)

Chemical mechanical planarization of Cu and Ta: Some recent developments: Y. Li, and S.V. Babu, Semiconductor Fab Tech 259, 13, (2001).

Chemical mechanical planarization of Cu and Ta: Role of different slurry constituents: S.V. Babu, Y. Li, and A. Jindal, JOM, June 2001

2000

Dishing effects during chemical-mechanical polishing of copper in acidic slurries, Q. Luo and S.V. Babu, J. Electrochem. Soc. 147, 4639-4644, (2000).

Hydroxyl radical formation in H2O2-amino acid mixtures and chemical mechanical polishing of copper, M. Hariharaputhiran, J. Zhang, S. Ramarajan, J. J. Keleher, Y. Li, and S. V. Babu, J. Electrochem. Soc. 147, 3820-3826, (2000).

Effect of pH and Ionic Strength on The Chemical-Mechanical Polishing of Tantalum, Ramarajan, S., Li, Y., Hariharaputhiran, M., Her, Y.-S., and Babu, S.V., Electrochemical and Solid-State Letters 3, 232-234, (2000).

Chemical-Mechanical Polishing of Ta, Hariharaputhiran, M., Li, Y., Ramarajan, S., and Babu, S.V., Electrochemical and Solid-State Letters 3, 95-98, (2000).

1999

Hardness of Sub- Micrometer Abrasive Particles and Polish Rate Measurements, Ramarajan, S., Hariharaputhiran, M., Her, Y.-S., and Babu, S.V., Surf. Engg. 15, 324-328, (1999).

Structural and electrochemical characterisation of metal doped diamondlike carbon films, Koduri P, Sunkara M.K., Dickey E.C., et al., Surf. Engg. 15, 373-376, (1999).

Transport phenomena in chemical mechanical polishing, Subramanian R.S., Zhang L, Babu S.V., J Electrochem Soc. 146, 4263-4272, (1999).

Anodic dissolution of diamondlike carbon film-coated type 301 stainless steel, C. Srividya, I. Moskowitz and S.V. Babu, J. Materials Res. 14, 2124-2132, (1999).

1998

Modification of the Preston Equation for the Chemical-Mechanical Polishing of Copper, Luo, Q., Ramarajan, S, and Babu S. V., Thin Solid Films 335, 160-167, (1998).

Development of a CD-ROM on thin film technologies: Design, Usability assessment and Challenges, S.V. Babu, I.I. Suni, D. Rasmussen, J. Engg. Education 583, 1998 Supplement.

Surface and corrosion characteristics of a-C:H/fluorocarbon films, C. Srividya, S.V. Babu and S.A. Visser, J. Adhesion 67, 81-85, (1998).

1997

Copper dissolution in aqueous ammonia-containing media during chemical-mechanical polishing, Q. Luo, R. Mackay, and S.V. Babu, Chemistry of Materials 9, 2101-2106, (1997).

Chemical-mechanical polishing of copper in alkaline media, Q. Luo, D.R. Campbell and S.V. Babu, Thin Solid Films 311, 177-182, (1997).

Corrosion protection ability of plasma-deposited a-C:H and fluorocarbon films, C. Srividya, M. Sunkara, and S.V. Babu, J. Materials Engg. And Performance 6, 586-590, (1997).

Resistance of plasma-deposited a-C:H/fluorocarbon films to anodic breakdown in aqueous electrolytes, C. Srividya, M. Sunkara and S.V. Babu, J. Materials Res. 12, 2099-2103, (1997).

Composition and surface energies of plasma-deposited multilayer fluorocarbon thin films, S.A. Visser, C.V. Srividya, and S.V. Babu, Surface Coatings and Technology 96, 210-222, (1997).

Surface and bulk composition-al characterization of plasma-polymerized fluorocarbon films prepared from hexafluoroethane and acetylene or butadiene reactant gases, S.A. Visser, C.E. Hewitt, J. Fornalik, C. Braustein, C.V. Srividya, and S.V. Babu, J. Appl. Poly. Sci. 66, 409-421, (1997).

A review of some properties and applications of diamondlike carbon films, C.V. Srividya and S.V. Babu, J. Energy, Heat and Mass Transfer 19, 39 (1997).

1996

Investigation of pad deformation and conditioning during the chemical-mechanical polishing of silicon dioxide films, K. Achuthan, J. Curry, M. Lacy, D. Campbell, and S.V. Babu, J. Electronic Materials 25, 1628-1632, (1996).

Corrosion resistance of diamondlike carbon film-coated aluminum films, C.V. Srividya and S.V. Babu, Chemistry of Materials 8, 2528-2533, (1996).

Stabilization of alumina slurry for chemical-mechanical polishing of copper, Q. Luo, D.R. Campbell and S.V. Babu, Langmuir 12, 3563-3566, (1996).

Synthesis of silicon nitride particles in pulsed rf plasmas, R.J. Buss and S.V. Babu, J. Vac. Sci. and Tech. B14, 577, (1996).

Books Edited:

Chemical-Mechanical Planarization: 2002 MRS meeting Proceedings, Vol. 732E (electronic- only publication), S.V. Babu, R.Singh, N. Hayasaka, and M. Oliver (eds.)

Chemical-mechanical Polishing 2001, Advances and Future Challenges: 2001 MRS Meeting Proceedings, Vol 671, S.V. Babu, K.C. Cadien and H. Yano (eds)

Chemical-Mechanical Polishing: Fundamentals and Challenges: MRS Spring Meeting proceedings, Vol. 566, S.V. Babu, S. Danyluk, M. Krishnan, and M. Tsujimura (eds) (1999).

For Complete Publications Click Here

Ph.D. Theses Supervised:

  1. Collision-induced dissociation of shock-heated diatomic mole¬cules: M. Ramakrishna (1977).
  2. Energy transfer in CO2 polyatomic molecule mixtures using laser induced fluorescence: P.R.M. Rao (1978); (co supervised by Dr. Y.V.C. Rao).
  3. Vibrational relaxation rate measurements in pure SO2, SO2 Ar and SO2 He mixtures: V.V.N. Kishore (1978); (co supervised by Dr. V. Subba Rao).
  4. Dissociation rate measurements in SO2 behind incident shock waves: M. Tyagaraju (1979); (co supervised by Dr. V. Subba Rao).
  5.  Phase equilibrium studies in CO2 using thermodynamic perturbation theory: Ratan Mohan (1984).
  6. Thermal, photon- and plasma-induced processes in polymers: V. Srinivasan (1986).
  7. Laser and plasma-enhanced deposi¬tion of refractory powders and films: M. David (1990).
  8. Laser and plasma-induced deposition of thin films: R. Padiyath (1993).
  9. Experimental and theoretical investigation of the excimer laser-induced ablation process: G. D'Couto (1993). 
  10. Plasma and laser-induced deposition and etching of diamondlike films: J. Seth (1993).
  11. Temperature distribution and adhesion in film-particle systems: S. Krishnan (1995).
  12. Corrosion and surface characteristics of a-C:H,F thin films: C.V. Srividya (1997).
  13. Evaluation and characterization of polyurethane chemical mechanical planarization polishing pads: K. Achuthan (1998).
  14. Chemical-mechanical polishing of thin copper films: Q. Luo (1997).
  15. Improved sub-micron particles for CMP slurries: H. Mariappan (2000).
  16. Novel slurries for CMP of metallic films: S. Ramarajan (2000)
  17. Doping and modification of diamondlike carbon films: I. Moskowitz (2001)
  18. Deposition and planarization of low-k dielectric films: V. Rajasekhar (2001)
  19. Role of film and particle properties during chemical-mechanical polishing: Y. Li (2001)
  20. Surface planarization of thin films: A. Jindal (2002) 
  21. Application of chemical mechanical planarization to charge coupled device technology: W. America (2002)
  22. Investigation of slurry systems in metal and dielectric CMP: Zhenyu Lu,  (2004)
  23. Relative roles of chemicals and abrasives in metal and dielectric chemical mechanical planarization: Jin Lu (2004)
  24. Chemical-mechanical polishing of metal and dielectric films for microelectronic applications: S. Hegde (2004)
  25. Role of slurry chemicals in chemical-mechanical planarization of copper interconnects: V. Gorantla (2004)
  26. Role of slurry chemicals in chemical-mechanical planarization of Copper: U. Patri (2005)
  27. Vesicle/Surfactant based slurries for metal planarization: Youngki Hong (2006)
  28. Carbon-based films for barrier applications: Suresh Ramakrishnan (2006)
  29. Chemical-mechanical planarization for MEMS application: Anita Natarajan (2007)
  30. Copper, barrier and Low-k film CMP processes: Vinay Meled (2007)
  31. Barrier and low-k film CMP investigations: S. Pandija (2007)
  32. Defect formation processes in CMP: V.K. Devarapalli (in progress)
  33. Evaluation of different abrasives and compositions for CMP applications: S.V. Janjam (in progress)
  34. Use of different surfactants for minimizing dishing in Cu CMP: Charan Surisetty ( in progress)
  35. Reverse selectivity slurries: Pradeep Dandu ( in Progress)

M.Tech/M.S. Theses Supervised:

  1. Simulation of the performance of a continuous CO laser. (P. Ojha, 1974)
  2. Design and construction of a TE CO2 laser. (K. A. Dambal, 1975)
  3. Variational calculation of the thermodynamic properties of CO2. (M. Antony, 1977)
  4. Fabrication and characteristics of a chemical CO laser. (G. S. Kishore, 1977)
  5. Equation of state for polar and non polar fluids. (C. Pattnaik, 1979)
  6. Mechanism for n butane decomposition at high temperatures. (S. Subramanian, 1980)
  7. Thermal degradation of some polymers. (V. Srinivasan, 1982)
  8. Kinetics and mechanisms of a Riston negative photoresist. (J. Zubritsky, 1984)
  9. Laser drilling studies of plexiglas and epoxy/glass composites. (J. Potenza, 1984)
  10. The kinetics of the CF4/O2 plasma etching of polymers. (J. Rembetski, 1985)
  11. Optimization of Riston photopolymerization. (R. Geary, 1985)
  12. Transient response studies of plasma etching of polymers. (K. Mack, 1987)
  13. Additive bath circulation design. (N. Gretzinger, 1986)
  14. Excimer laser induced etching. (M. Armacost, 1986)
  15. Photoresist kinetics. (J. Ferrari, 1987)
  16. Cermet etching in plasma discharges. (E. Malocsay, 1987)
  17. Trans¬ient behavior of plasma reactors. (P. Scott, 1987)
  18. Excimer laser induced deposition of copper. (M. Ritz, 1987)
  19. Laser and rf plasma-induced deposition of copper films. (R. Padiyath, 1990)
  20. Engineering Multimedia (K. Tilstra, 1996)
  21. CD-ROM project on thin film technologies. (P. Srisudha, 1997)
  22. Deposition and characterization of indium-tin-oxide films (J. Li, 1996).
  23. Laser-induced ablation of ULE glass (R. Clark, 1996).
  24. Chemical-mechanical polishing of copper films (V. Rajasekhar, 1998).
  25. Deposition of high-k films by CVD (J. Dalton, 1998).
  26. Chemical-mechanical polishing of metal films (P. Teegapuram, 2000)
  27. Chemical-mechanical polishing of patterned structures (D. Stoll, 2002)
  28. Silica particle characteristics in chemical-mechanical polishing (S. Narayanan, 2002)
  29. Studies on abrasive particle breakdown & comparison of an experimental fixed abrasive pad with a 3-M fixed abrasive pad (U. Patri, 2003)
  30. Adhesion measurements for Cu and barrier film CMP (S. Pandija, 2005)
  31. Preparation and Evaluation of Mixed Abrasive Slurries for Chemical Mechanical Planarization of Copper and Tantalum (S. Janjam, 2006)
  32. Effect of various dopants on the barrier and optical properties of DLC films (Shilpa Rudrabhatla, 2006)
  33. Dodecyl benzene sulfonic acid as corrosion inhibitor in copper CMP: Charan Surisetty (Jan.2008)
  34. Selective chemical mechanical planarization of silicon dioxide over silicon nitride in STI process: Pradeep Dandu (Feb. 2008)
  35. Shivaji Peddeti ( in progress)